Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Dmitry Firsov"'
Autor:
Vladimir Fedorov, Maxim Vinnichenko, Ratmir Ustimenko, Demid Kirilenko, Evgeny Pirogov, Alexander Pavlov, Roman Polozkov, Vladislav Sharov, Andrey Kaveev, Dmitry Miniv, Liliia Dvoretckaia, Dmitry Firsov, Alexey Mozharov, Ivan Mukhin
Publikováno v:
ACS Applied Nano Materials. 6:5460-5468
Autor:
Mher Mkrtchyan, David Hayrapetyan, Eduard Kazaryan, Hayk Sarkisyan, Sotirios Baskoutas, Dmitry Firsov, Maxim Vinnichenko
Publikováno v:
SSRN Electronic Journal.
Publikováno v:
Springer Proceedings in Physics ISBN: 9783031112867
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d7430dab107add527cbfdcc01963461
https://doi.org/10.1007/978-3-031-11287-4_2
https://doi.org/10.1007/978-3-031-11287-4_2
Autor:
Maxim Vinnichenko, Ivan Makhov, Vadim Panevin, Ratmir Ustimenko, Grigorii Melentev, Sergey Sorokin, Irina Sedova, David Hayrapetyan, Dmitry Firsov
Publikováno v:
Springer Proceedings in Physics ISBN: 9783031112867
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcca8d454de0a3ba881257699e220f3e
https://doi.org/10.1007/978-3-031-11287-4_7
https://doi.org/10.1007/978-3-031-11287-4_7
This book features selected articles based on contributions presented at the 9th International Symposium on Optics and Its Applications (OPTICS-2022) in Yerevan-Ashtarak, Armenia. The annual OPTICS symposium brings together renowned experts from all
Autor:
Vadim Shalygin, Dmitry Firsov
Publikováno v:
Journal of Physics: Conference Series. 816:011001
Autor:
Vadim Shalygin, Dmitry Firsov
Publikováno v:
Journal of Physics: Conference Series. 690:011001
Publikováno v:
Semiconductors. 39:50
Spectra of intraband absorption of polarized mid-IR light were investigated in undoped, p-, and n-doped InAs/GaAs quantum dots (QDs) covered with an InGaAs layer. Optical matrix elements for intraband electron and hole transitions in QDs have been ca
Publikováno v:
Semiconductors. 39:124
Arrays of InAs quantum dot (QD) molecules in the GaAs matrix, which consist of pairs of vertically aligned InAs QDs, have been synthesized by molecular beam epitaxy. A study of the resulting structures by transmission electron microscopy demonstrated
Autor:
Vorobjev, L. E., Danilov, S. N., Donetsky, D. V., Zerova, V. L., Kochegarov, Yu V., Dmitry Firsov, Shalygin, V. A., Zegrya, G. G., Towe, E.
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::ac6065dcb964b4e37a5e269c4204c4b8
http://www.scopus.com/inward/record.url?eid=2-s2.0-33751048622&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-33751048622&partnerID=MN8TOARS