Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Dmitrii V. Andreev"'
Publikováno v:
Technologies, Vol 12, Iss 7, p 102 (2024)
We propose a technique for the wafer-level testing of the gate dielectrics of metal–insulator–semiconductor (MIS) devices by the high-field injection of electrons into the dielectric using a mode of increasing injection current density up to a se
Externí odkaz:
https://doaj.org/article/9933ac09d686452c8445d01456be79d2
Publikováno v:
Sensors, Vol 20, Iss 8, p 2382 (2020)
The paper suggests a design of radiation sensors based on metal-oxide-semiconductor (MOS) structures and p-channel radiation sensitive field effect transistors (RADFET) which are capable to function under conditions of high-field tunnel injection of
Externí odkaz:
https://doaj.org/article/58a5b33d62774c52a2f766ad6a9860ad
Publikováno v:
2022 Moscow Workshop on Electronic and Networking Technologies (MWENT).
Publikováno v:
International Conference on Micro- and Nano-Electronics 2021.
Publikováno v:
physica status solidi (a). 219:2100400
Autor:
Dmitrii V. Andreev
Publikováno v:
IOP Conference Series: Earth and Environmental Science. 315:032012