Zobrazeno 1 - 10
of 249
pro vyhledávání: '"Dmitriev, I P"'
Autor:
Savchenko, M. L., Gospodaric, J., Shuvaev, A., Dmitriev, I. A., Dziom, V., Dobretsova, A. A., Mikhailov, N. N., Kvon, Z. D., Pimenov, A.
We report on dynamic Shubnikov - de Haas (SdH) oscillations that are measured in the optical response, sub - terahertz transmittance of two-dimensional systems, and reveal two distinct types of oscillation nodes: "universal" nodes at integer ratios o
Externí odkaz:
http://arxiv.org/abs/2402.05879
Publikováno v:
Laser Phys. Lett. 20 (2023) 065202
We develop a new method for high-precision tomography of ion qubit registers under conditions of limited distinguishability of its logical states. It is not always possible to achieve low error rates during the readout of the quantum states of ion qu
Externí odkaz:
http://arxiv.org/abs/2307.02890
Autor:
Hubmann, S., Di Battista, G., Dmitriev, I. A., Watanabe, K., Taniguchi, T., Efetov, D. K., Ganichev, S. D.
We report on observation of the infrared photoresistance of twisted bilayer graphene under continuous quantum cascade laser illumination at a frequency of 57.1 THz. The photoresistance shows an intricate sign-alternating behavior under variations of
Externí odkaz:
http://arxiv.org/abs/2207.14223
We demonstrate that long-debated immunity of microwave-induced resistance oscillations (MIRO) to the sense of circular polarization is not a generic property of this phenomenon in solid-state two-dimensional electron systems. Using a large-area GaAs-
Externí odkaz:
http://arxiv.org/abs/2206.07600
Autor:
Candussio, S., Bernreuter, S., Rockinger, T., Watanabe, K., Taniguchi, T., Eroms, J., Dmitriev, I. A., Weiss, D., Ganichev, S. D.
We report on the observation of the circular transversal terahertz photoconductivity in monolayer graphene supplied by a back gate. The photoconductivity response is caused by the free carrier absorption and reverses its sign upon switching the radia
Externí odkaz:
http://arxiv.org/abs/2202.01135
The present work is devoted to the development of a method for high-precision tomography of ion qubit registers under conditions of limited distinguishability of the states of a logical value 0 and a logical value 1. In the considered ion qubits, the
Externí odkaz:
http://arxiv.org/abs/2201.03071
Autor:
Bandurin, D. A., Mönch, E., Kapralov, K., Phinney, I. Y., Lindner, K., Liu, S., Edgar, J. H., Dmitriev, I. A., Jarillo-Herrero, P., Svintsov, D., Ganichev, S. D.
Publikováno v:
Nature Physics 18, 462-467 (2022)
Two-dimensional electron systems subjected to a perpendicular magnetic field absorb electromagnetic radiation via the cyclotron resonance (CR). Here we report a qualitative breach of this well-known behaviour in graphene. Our study of the terahertz p
Externí odkaz:
http://arxiv.org/abs/2106.02117
Autor:
Phinney, I. Y., Bandurin, D. A., Collignon, C., Dmitriev, I. A., Taniguchi, T., Watanabe, K., Jarillo-Herrero, P.
Publikováno v:
Phys. Rev. Lett. 127, 056802 (2021)
Twisted bilayer graphene (TBG) provides an example of a system in which the interplay of interlayer interactions and superlattice structure impacts electron transport in a variety of non-trivial ways and gives rise to a plethora of interesting effect
Externí odkaz:
http://arxiv.org/abs/2106.02088
Autor:
Savchenko, M. L., Shuvaev, A., Dmitriev, I. A., Bykov, A. A., Bakarov, A. K., Kvon, Z. D., Pimenov, A.
Publikováno v:
Phys. Rev. Research 3, 012013 (2021)
We report an observation of magnetooscillations of the microwave power transmitted through the high mobility two-dimensional electron system hosted by a GaAs quantum well. The oscillations reflect an enhanced absorption of radiation at high harmonics
Externí odkaz:
http://arxiv.org/abs/2008.11114
Terahertz photoresistivity of a high-mobility 3D topological insulator based on a strained HgTe film
Autor:
Savchenko, M. L., Otteneder, M., Dmitriev, I. A., Mikhailov, N. N., Kvon, Z. D., Ganichev, S. D.
We report on a detailed study of the terahertz (THz) photoresistivity in a strained HgTe three-dimensional topological insulator (3D TI) for all Fermi level positions: inside the conduction and valence bands, and in the bulk gap. In the presence of a
Externí odkaz:
http://arxiv.org/abs/2008.04695