Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Dmitri Choutov"'
Autor:
Hideki Takeuchi, Robert J. Mears, Robert J. Stephenson, Marek Hytha, Daniel Connelly, Pavel Fastenko, Richard Burton, Nyles W. Cody, Doran Weeks, Dmitri Choutov, Nidhi Agrawal, Suman Datta
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 481-486 (2018)
Interstitial trapping by oxygen-inserted silicon channel results in blocking of boron and phosphorus transient enhanced diffusion as well as retention of channel boron profiles during the gate oxidation process. The enhanced doping profile control ca
Externí odkaz:
https://doaj.org/article/79e4bf760b024923ad9ffad69e37f5e5
Autor:
Robert John Stephenson, Hideki Takeuchi, Hiu Yung Wong, Dmitri Choutov, K. Doran Weeks, Nyles Cody, Richard Burton, Robert J. Mears, Shuyi Li, Marek Hytha, Yi-Ann Chen, Daniel Connelly
Publikováno v:
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Insertion of partial monolayers of oxygen during silicon epitaxy (OI) has been shown experimentally and by simulation to facilitate the blocking interstitials during oxidation and thus to enable precision engineering of dopant profiles. This invited
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10bf0f509a171d2a6932096b5e7b2c42
https://doi.org/10.1109/edtm47692.2020.9117944
https://doi.org/10.1109/edtm47692.2020.9117944
Autor:
Richard Burton, Marek Hytha, Robert J. Mears, Dmitri Choutov, Daniel Connelly, Pavel Fastenko, Robert John Stephenson, Suman Datta, Hideki Takeuchi, Nyles W. Cody, Nidhi Agrawal, Doran Weeks
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 481-486 (2018)
Interstitial trapping by oxygen-inserted silicon channel results in blocking of boron and phosphorus transient enhanced diffusion as well as retention of channel boron profiles during the gate oxidation process. The enhanced doping profile control ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3d1e09f90386087a446fb5db83211489
https://ieeexplore.ieee.org/document/8094923/
https://ieeexplore.ieee.org/document/8094923/