Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Diyuan Zheng"'
Publikováno v:
IEEE Electron Device Letters. 42:1500-1503
Plasmon-enhanced lateral photovoltaic effect (LPE) in metal-semiconductor Schottky junctions has been proposed as a fascinating alternative for position sensitive detectors (PSDs). The efficiency of plasmon-induced hot electron injection into semicon
Publikováno v:
ACS Applied Electronic Materials. 2:906-912
Photo Hall effect (PHE) has attracted much attention for a long time due to its application in photosensitive semiconductor devices. In this paper, we show a new PHE observed in P-type silicon indu...
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany). 18(7)
As one of the typical transition-metal dichalcogenides with distinct optical and electrical properties, WS
Publikováno v:
Optics letters. 46(13)
Complex oxide perovskites exhibit a range of novel, to the best of our knowledge, physical phenomena and have gained popularity as a material system in the past decades. Strontium titanate (
Autor:
Xinhui Zhao, Renzhi Wang, Peng Bao, Yiru Niu, Diyuan Zheng, Zhuyikang Zhao, Nan Su, Chenhua Hu, Su Hu, Ying Wang, Hui Wang
Publikováno v:
Optics Letters. 47:4076
Previously reported photoelectric devices have mainly been limited to inorganic materials. Even though preparing high-performance photoelectric devices with organic biomaterials is an inevitable trend in commercialization, fabricating organic photoel
Publikováno v:
Nanotechnology. 32(50)
Due to magnetic field tunability and the abundance of iron in the Earth's crust, iron oxide-based resistive random access memory (RRAM) is considered to be low cost and potential for multi-level storage. However, the relatively high operation voltage
Publikováno v:
Physical Review Applied. 13
The geometric magnetoresistance effect in semiconductors has remained a heated discussion for many years. However, there are few reports on laser-triggered geometric magnetoresistance in traditional structures. In this work, we use a laser to change
Autor:
Xinyuan Dong, Binbin Liu, Yiru Niu, Anhua Dong, Meng Yuan, Diyuan Zheng, Hui Wang, Xinyue Chen
Publikováno v:
Nanotechnology. 31(40)
An improvement in the uniformity of resistive switching behaviors by embedding Cu nanodots is observed in Ta2O5 memory cells. In the conventional device structure, the growth of conductive filaments tends to be random and uncontrollable, which is the
Publikováno v:
Applied Surface Science. 579:152057
Publikováno v:
Applied Surface Science. 574:151662
WS2, as a typical transition-metal dichalcogenides (TMDs) with strong light–matter interaction, exhibits great potential for highly-responsive photoelectric detectors. In this work, a series of WS2 nano-films with different thicknesses are successf