Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Dix, Nico"'
Autor:
Tan, Huan, Quintana, Alberto, Dix, Nico, Estandía, Saul, Sort, Jordi, Sánchez, Florencio, Fina, Ignasi
Publikováno v:
In Nano Energy May 2024 123
Autor:
Estandia, Saul, Gazquez, Jaume, Varela, Maria, Dix, Nico, Qian, Mengdi, Solanas, Raul, Fina, Ignasi, Sanchez, Florencio
Epitaxial orthorhombic Hf0.5Zr0.5O2 (HZO) films on La0.67Sr0.33MnO3 (LSMO) electrodes show robust ferroelectricity, with high polarization, endurance and retention. However, no similar results have been achieved using other perovskite electrodes so f
Externí odkaz:
http://arxiv.org/abs/2102.09174
Autor:
Fina, Ignasi, Dix, Nico, Menéndez, Enric, Crespi, Anna, Foerster, Michael, Aballe, Lucia, Sánchez, Florencio, Fontcuberta, Josep
Publikováno v:
ACS Applied Materials & Interfaces 2020 12 (13), 15389-15395
The antiferromagnetic to ferromagnetic transition occurring above room temperature in FeRh is attracting interest for applications in spintronics, with perspectives for robust and untraceable data storage. Here, we show that FeRh films can be grown o
Externí odkaz:
http://arxiv.org/abs/2102.08428
Autor:
Sulzbach, Milena Cervo, Estandía, Saúl, Long, Xiao, Lyu, Jike, Dix, Nico, Gàzquez, Jaume, Chisholm, Matthew F., Sánchez, Florencio, Fina, Ignasi, Fontcuberta, Josep
Publikováno v:
Adv. Electron. Mater. 2020, 6, 1900852
Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can be changed by a suitable writing voltage. However, the microscopic mech
Externí odkaz:
http://arxiv.org/abs/2006.07093
Publikováno v:
Crystal Growth Design 20, 3801 (2020)
Epitaxial ferroelectric HfO2 films are the most suitable to investigate intrinsic properties of the material and for prototyping emerging devices. Ferroelectric Hf0.5Zr0.5O2(111) films have been epitaxially stabilized on La2/3Sr1/3MnO3(001) electrode
Externí odkaz:
http://arxiv.org/abs/2006.02663
Autor:
Estandia, Saul, Dix, Nico, Gazquez, Jaume, Fina, Ignasi, Lyu, Jike, Chisholm, Matthew F., Fontcuberta, Josep, Sanchez, Florencio
Publikováno v:
ACS Applied Electronic Materials, 1, 1449 (2019)
The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic phase of hafnia is proved. Epitaxial bilayers of Hf0.5Zr0.5O2 and La0.67Sr0.33MnO3 electrodes were grown on a set of single crystalline oxide 001-oriented,
Externí odkaz:
http://arxiv.org/abs/1909.01563
Autor:
Isasa, Miren, Vélez, Saül, Sagasta, Edurne, Bedoya-Pinto, Amilcar, Dix, Nico, Sánchez, Florencio, Hueso, Luis E., Fontcuberta, Josep, Casanova, Fèlix
Publikováno v:
Physical Review Applied 6, 034007 (2016)
We study the spin Hall magnetoresistance (SMR) in Pt grown $\textit{in situ}$ on CoFe$_2$O$_4$ (CFO) ferrimagnetic insulating (FMI) films. A careful analysis of the angle-dependent and field-dependent longitudinal magnetoresistance indicates that the
Externí odkaz:
http://arxiv.org/abs/1510.01449
Publikováno v:
Scientific Reports 2,758 (2012)
In recent years, striking discoveries have revealed that two-dimensional electron liquids (2DEL) confined at the interface between oxide band-insulators can be engineered to display a high mobility transport. The recognition that only few interfaces
Externí odkaz:
http://arxiv.org/abs/1210.7955
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