Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Divya Somvanshi"'
Publikováno v:
Micromachines, Vol 11, Iss 6, p 547 (2020)
The use of multilayer semiconductor heterojunction structures has shown promise in infrared detector applications. Several heterostructures with innovative compositional and architectural designs have been displayed on emerging infrared technologies.
Externí odkaz:
https://doaj.org/article/fad30716da114c9bbc6f165dae7614be
Autor:
Divya Somvanshi, Satyabrata Jit
Publikováno v:
Materials Science in Semiconductor Processing. 164:107598
Publikováno v:
2022 IEEE Calcutta Conference (CALCON).
Publikováno v:
Materials Science in Semiconductor Processing. 163:107572
Publikováno v:
ACS Applied Materials & Interfaces. 12:36355-36361
Atomically thin semiconductors are of interest for future electronics applications, and much attention has been given to monolayer (1L) sulfides, such as MoS2, grown by chemical vapor deposition (C...
Publikováno v:
2021 5th International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech).
Publikováno v:
IEEE Sensors Letters. 3:1-4
Reduced dark current leading to a specific detectivity (D*) advantage over conventional detectors for extended threshold wavelength (ET) detectors are reported in this article. For an infrared (IR) detector with a graded injector barrier and barrier
Effect of biaxial strain on the electronic structure of Nb-doped WSe2 monolayer: a theoretical study
Publikováno v:
2021 Devices for Integrated Circuit (DevIC).
Strain engineering is an effective strategy to tune the electronic structure of two-dimensional (2D) materials. In this work, we analyzed the effect of biaxial strain on the electronic structures of Nb-doped WSe2 monolayer (ML) by using the density f
This book consolidates the collective contributions of various authors, presenting a diverse array of materials for systematic property assessment and their subsequent application in electronic, magnetic, and spintronic technologies. Encompassing pur
Publikováno v:
2020 IEEE International IOT, Electronics and Mechatronics Conference (IEMTRONICS).
This work reports the optical and electrical characteristics of n- Molybdenum disulfide (MoS2)/p-Si based heterojunction diodes. MoS2 quantum dots (QDs) based thin film synthesized on the p-Si substrate by facile-colloidal synthesis process followed