Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Dirochka, A."'
Publikováno v:
Journal of Communications Technology and Electronics. 66:358-361
In this study we investigated the dependences of the rate of ion-beam etching of the upper contact layer (GaAs:Si), an active region consisting of a 50-fold alternation of barrier layers (AlxGa1–xAs) and quantum wells (GaAs:Si) and the lower contac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d910963725483a07b26915427421763
https://doi.org/10.1134/s1064226921030190
https://doi.org/10.1134/s1064226921030190
Faktory riska bystrogo razvitiya pochechnoy nedostatochnosti u bol'nykh s diabeticheskoy nefropatiey
Autor:
Marina Vladimirovna Shestakova, Yu A Dirochka, Minara Shamkhalovna Shamkhalova, Lyudmila Alexandrovna Chugunova, Ivan Ivanovich Dedov
Publikováno v:
Сахарный диабет, Vol 2, Iss 1, Pp 35-38 (1999)
Актуальность. Диабетическая нефропатия развивается через 10-15 лет от начала заболевания и приводит к хронической почечной недостаточно
Externí odkaz:
https://doaj.org/article/e5d4519d672f4371ba478b308d1b72f2
Akademický článek
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Publikováno v:
Journal of Communications Technology and Electronics. 61:1166-1174
The analysis of the current state of solid photoelectronics for thermal imaging and thermal direction-finding equipment of new generation is performed. The results of the latest development of photoelectronic modules for thermal imaging and thermal d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c13c8dd91eb6ff3a7d024c409a87c28
https://doi.org/10.1134/s1064226916100053
https://doi.org/10.1134/s1064226916100053
Faktory riska bystrogo razvitiya pochechnoy nedostatochnosti u bol'nykh s diabeticheskoy nefropatiey
Autor:
Chugunova La, Yu A Dirochka, Ivan Ivanovich Dedov, Marina Vladimirovna Shestakova, Minara Shamkhalovna Shamkhalova
Publikováno v:
Сахарный диабет, Vol 2, Iss 1, Pp 35-38 (1999)
Актуальность. Диабетическая нефропатия развивается через 10-15 лет от начала заболевания и приводит к хронической почечной недостаточно
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb5cff65d1f28722aeb6be5a8528600b
https://www.dia-endojournals.ru/jour/article/view/5731
https://www.dia-endojournals.ru/jour/article/view/5731
Akademický článek
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Publikováno v:
Applied Physics A Solids and Surfaces. 57:567-572
Pb1−x−ySnxGeyTe:In epitaxial films are examined in a wide temperature interval and at various background fluxes. These films have high sensitivity to infrared radiation in the spectral range λ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e5e6b830d38c3338d69ddc30c61de72
https://doi.org/10.1007/bf00331760
https://doi.org/10.1007/bf00331760
Publikováno v:
Inorganic Materials. 37:20-22
Thin layers of multicomponent solid solutions between IV–VI compounds, close in composition to the source material, are grown by a modified hot-wall method. The carrier lifetime and concentration in the layers and their structural perfection depend
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2cc7ec0980cab5bd9bd5684bc9fa7b5
https://doi.org/10.1023/a:1026721007569
https://doi.org/10.1023/a:1026721007569
Publikováno v:
19th International Conference on Photoelectronics and Night Vision Devices.
This PDF file contains the front matter associated with SPIE Proceedings Volume 6636, including the Title Page, Copyright information, Table of Contents, Introduction (if any), and the Conference Committee listing.© (2007) COPYRIGHT SPIE--The Intern
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::188322a1eb9be7619f861a481e69b1e6
https://doi.org/10.1117/12.746720
https://doi.org/10.1117/12.746720
Autor:
D. V. Borodin, A. V. Golubkov, A. M. Filachov, A. A. Lopukhin, V. F. Chishko, J. V. Osipov, I. L. Kasatkin, I. D. Burlakov, A. I. Dirochka
Publikováno v:
SPIE Proceedings.
Indium antimonide MWIR Focal Plane Array (FPA) have been developed and investigated. FPA consists of two dimensional arrays of InSb photodiodes bonded by indium bumps with CMOS-multiplexer and LN 2 cryocooler. Noise equivalent power NEP 1 10 -12 W/pi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69c61c38f69a5a49205fccf0e9a41767
https://doi.org/10.1117/12.622103
https://doi.org/10.1117/12.622103