Zobrazeno 1 - 10
of 84
pro vyhledávání: '"Dirnstorfer, I."'
Publikováno v:
In Microelectronic Engineering 2011 88(7):1148-1151
Publikováno v:
EPJ Web of Conferences, Vol 79, p 01004 (2014)
Silicon heterojunction metal wrap through solar cells have the potential for high efficiencies in a simple process flow. However, the non-conformal deposition of the hydrogenated amorphous silicon emitter causes specific loss mechanisms of this cell
Externí odkaz:
https://doaj.org/article/d75d6b1da7124b98bf0c4765de3eb16c
Publikováno v:
In Thin Solid Films 21 February 2000 361-362:263-267
Autor:
Dirnstorfer, I *, Burkhardt, W, Kriegseis, W, Österreicher, I, Alves, H, Hofmann, D.M, Ka, O, Polity, A, Meyer, B.K, Braunger, D
Publikováno v:
In Thin Solid Films 21 February 2000 361-362:400-405
Publikováno v:
In Thin Solid Films 21 February 2000 361-362:504-508
Publikováno v:
In Physica B: Physics of Condensed Matter 15 December 1999 273-274:930-933
Autor:
Dirnstorfer, I., Hofmann, D. M.
Publikováno v:
Journal of Applied Physics; 2/1/1999, Vol. 85 Issue 3, p1423, 6p, 1 Diagram, 1 Chart, 4 Graphs
Autor:
Dirnstorfer, I., Schilling, N., Koerner, S., Gierth, P., Sontag, D., Jordan, P.M., Simon, D.K., Fengler, F., Mikolajick, T., Linaschke, D., Dani, I., Marcinkowsi, M., Eberstein, M., Rebenklau, L., Partsch, U.
29th European Photovoltaic Solar Energy Conference and Exhibition; 1044-1048
A silicon heterojunction solar cell basing on amorphous and crystalline silicon is combined with the metal wrap through technology. In this way, the geometrical front s
A silicon heterojunction solar cell basing on amorphous and crystalline silicon is combined with the metal wrap through technology. In this way, the geometrical front s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d6ebb518c900458d86a825c2a108a60
29th European Photovoltaic Solar Energy Conference and Exhibition; 1028-1031
Tin-doped indium oxide (ITO) is known for its potential to combine excellent transparency with low resistivity. To achieve best performance usually high process tempera
Tin-doped indium oxide (ITO) is known for its potential to combine excellent transparency with low resistivity. To achieve best performance usually high process tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb9eefd68a1ce435f8d3dc0aa5252ba8
Autor:
Benner, F., Knaut, M., Jordan, P.M., Dirnstorfer, I., Ocker, J., Bartha, J.W., Mikolajick, T.
28th European Photovoltaic Solar Energy Conference and Exhibition; 1156-1161
Al2O3 passivation layers are doped with Ti to introduce trap sites for electrons and to improve the field effect passivation. Doping concentrations in the range of 0.5
Al2O3 passivation layers are doped with Ti to introduce trap sites for electrons and to improve the field effect passivation. Doping concentrations in the range of 0.5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4f82e02c5f11ad919f4ccb74f740aa3