Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Dirk Wolansky"'
Publikováno v:
ECS Transactions. 93:97-100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b0033782a1124348609006fdf0eb747
https://doi.org/10.1149/09301.0097ecst
https://doi.org/10.1149/09301.0097ecst
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 31:528-534
In this paper, we directly compare the influence of sputtered and chemical vapor deposited TiN liners on the contact resistance of large tungsten filled vias with an aspect ratio of 3:1. Scanning transmission electron microscopy, energy-dispersive X-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::781915340ea787fa398000c8d07cda4a
https://doi.org/10.1109/tsm.2018.2855656
https://doi.org/10.1109/tsm.2018.2855656
Autor:
Matthias Wietstruck, Mehmet Kaynak, Atia Shafique, K. Schulz, Peter Zaumseil, Yasar Gurbuz, Alexander Goritz, Yuji Yamamoto, Steffen Marschmeyer, Mirko Fraschke, Falk Korndoerfer, P. Kulse, Dirk Wolansky, Canan Baristiran Kaynak
Publikováno v:
ECS Transactions. 86:373-383
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8f6023c3c80ed975e2564e9d6fe6564
https://doi.org/10.1149/08607.0373ecst
https://doi.org/10.1149/08607.0373ecst
Autor:
Andreas Mai, Sebastian Schulze, Dirk Wolansky, Mirko Fraschke, Grzegorz Lupina, Mindaugas Lukosius, Marco Lisker, Julia Kitzmann
Publikováno v:
Solid-State Electronics. 144:17-21
Two different approaches for contacting graphene in a 200 mm wafer silicon technology environment were tested. The key is the opportunity to create a thin SiN passivation layer on top of the graphene protecting it from the damage by plasma processes.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36fea3c24fbbd8dfcc8dbb132a4ac63b
https://doi.org/10.1016/j.sse.2018.02.010
https://doi.org/10.1016/j.sse.2018.02.010
Autor:
Günther Zeck, Clemens Boucsein, Stefan Keil, Florian Jetter, Gabriel Bertotti, Roland Thewes, Normal Dodel, Matthias Schreiter, Dirk Wolansky, Karl-Heinz Boven
Publikováno v:
IEEE Electron Device Letters. 38:967-970
The effect of optical stimulation of neural tissue is considered in capacitively coupled CMOS microelectrode arrays used for in vitro extracellular recording from neural tissue. Using a 25-nm high-k TiO2 sensor dielectric with 20% ZrO2, light-induced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e82159903953aa6b367e113f9fed69bc
https://doi.org/10.1109/led.2017.2701901
https://doi.org/10.1109/led.2017.2701901
Autor:
Thomas VoB, P. Kulse, Mehmet Kaynak, Dirk Wolansky, Matthias Wietstruck, Steffen Marschmeyer, A. Kruger, Marco Lisker, Mirko Fraschke
Publikováno v:
2018 IEEE 68th Electronic Components and Technology Conference (ECTC).
In this work, the development of a Through-Silicon Via process module for multi-project wafer SiGe BiCMOS and silicon interposer is demonstrated. The TSV technology based on a via-middle approach is optimized to provide TSV process and design flexibi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5b652f65512f5af7e938946131301f6
https://doi.org/10.1109/ectc.2018.00341
https://doi.org/10.1109/ectc.2018.00341
Publikováno v:
Semiconductor Science and Technology
Nickel silicide (NiSi) can improve the RF performance of SiGe hetero bipolar transistors (HBT) compared to cobalt silicide (Heinemann et al 2016 IEDM Tech. Dig. 51–4). In this paper, the impact of different procedures to form NiSi on HBT and MOS de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9148e8dcfb89a438191d3859dae0d525
Autor:
Mirko Fraschke, Dirk Wolansky, Thomas Schroeder, Christian Wipf, Christian Wenger, Udo Christian Kaletta, Markus Andreas Schubert
Publikováno v:
IEEE Transactions on Electron Devices. 62:764-768
A CMOS compatible AlN/SiO2/Si3N4/Si(100) surface acoustic wave (SAW) device has been fabricated and will be compared with standard AlN/SiO2-based devices. The presented filter demonstrates high potential for CMOS integrated high-frequency SAW devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9f2377ab55191c5120ef830ae4f8a5b
https://doi.org/10.1109/ted.2015.2395443
https://doi.org/10.1109/ted.2015.2395443
Autor:
Dirk Wolansky
Publikováno v:
2017 IEEE International Interconnect Technology Conference (IITC).
In this paper, a significant extension of the Rs tuning range of sputtered titanium nitride (TiN) layers for thin film resistor (TFR) applications in a thickness range between 50 and 100nm is demonstrated. From an originally resistance range between
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8816cad42f8942626770fd98ccd7fed
https://doi.org/10.1109/iitc-amc.2017.7968942
https://doi.org/10.1109/iitc-amc.2017.7968942
Autor:
A. Goeritz, P. Kulse, Matthias Wietstruck, Steffen Marschmeyer, Mehmet Kaynak, Mesut Inac, M. Lisker, Andreas Mai, Dirk Wolansky, A. Krueger, Thomas Voss
Publikováno v:
2017 IEEE 67th Electronic Components and Technology Conference (ECTC).
In this work, the development of engineered silicon substrates for a novel via-middle TSV integration concept is demonstrated. These substrates include 3D buried etch-stop layers which provide both an ideal vertical and lateral etch-stop for TSV tren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd1997adf4ab227d10c4ea916ddb4269
https://doi.org/10.1109/ectc.2017.120
https://doi.org/10.1109/ectc.2017.120