Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Dirk Vietzke"'
Autor:
Erdem Kaltalioglu, Zhijiong Luo, Victor Ku, Y. H. Lin, A. Ajmera, Seong-Dong Kim, T. Schiml, W. L. Tan, S. Marokkey, P. Wrschka, Dirk Vietzke, M. Weybright, F.F. Jamin, R. Mo, D.-G. Park, An L. Steegen, Wenhe Lin, Padraic Shafer, Terence B. Hook, V. Klee, JiYeon Ku, Rajesh Rengarajan, C. Wann, K. Kim, Jenny Lian, Andy Cowley, Victor Chan, Sunfei Fang, A. Vayshenker, K-C. Lee, Christopher V. Baiocco, I. Yang, L. Kim, Manfred Eller, Randy W. Mann, B. Zhang, C. Coppock, Mark Hoinkis, J. Sudijono, Huilong Zhu, Phung T. Nguyen
Publikováno v:
Scopus-Elsevier
This paper reports a cutting-edge 65nm CMOS technology featuring high performance and low power CMOS devices for both general and low power applications. Utilizing plasma nitrided gate oxide, off-set and slim spacers, advanced co-implants, NiSi and l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5455847fc85f7a2c23cdb1895e40c02
https://doi.org/10.1109/iedm.2004.1419254
https://doi.org/10.1109/iedm.2004.1419254
Integration of high-performance, low-leakage and mixed signal features into a 100 nm CMOS technology
Autor:
Thomas Schafbauer, S. Sportouch, Baozhen Li, Pak Leung, Y. H. Lin, Yi-Cheng Chen, Yimin Huang, Phung T. Nguyen, Chuan Lin, Shih-Fen Huang, Ming-Tsan Lee, A. Olbrich, Philipp Riess, J. Brighten, G. Knoblinger, Andy Cowley, U. Hodel, A. Grassmann, W. Nissl, Dirk Vietzke, Kun-Chi Lin, Larry Clevenger, Kai Esmark, Robert C. Wong, Hsiang-Jen Huang, C. Wann, M. Commons, Alan J. Leslie, T. Schiml, Martin Wendel, Qiuyi Ye, Erdem Kaltalioglu, Nivo Rovedo, Alvin G. Thomas
Publikováno v:
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).
Low voltage operation in sub-0.25 /spl mu/m requirements mean that the simultaneous integration of all components on a single chip - high performance, low leakage and mixed-signal components - is crucial. In this paper, we present the successful inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a1f93d57ef161cbbc8cc1ab25585ee1
https://doi.org/10.1109/vlsit.2002.1015388
https://doi.org/10.1109/vlsit.2002.1015388
Autor:
Schafbauer, T., Brighten, J., Yi-Cheng Chen, Clevenger, L., Commons, M., Cowley, A., Esmark, K., Grassmann, A., Hodel, U., Hsiang-Jen Huang, Shih-Fen Huang, Yimin Huang, Kaltalioglu, E., Knoblinger, G., Ming-Tsan Lee, Leslie, A., Pak Leung, Baozhen Li, Chuan Lin, Yi-Hsiung Lin
Publikováno v:
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303); 2002, p62-63, 2p
Autor:
Shih-Fen Huang, Wann, C., Yu-Shyang Huang, Chih-Yung Lin, Schafbauer, T., Shui-Ming Cheng, Yao-Ching Cheng, Vietzke, D., Eller, M., Chuan Lin, Quiyi Ye, Rovedo, N., Biesemans, S., Nguyen, P., Dennard, R., Bomy Chen
Publikováno v:
2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184); 2001, p107-108, 2p