Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Dirk Utess"'
Autor:
Maximilian Lederer, Thomas Kämpfe, Norman Vogel, Dirk Utess, Beate Volkmann, Tarek Ali, Ricardo Olivo, Johannes Müller, Sven Beyer, Martin Trentzsch, Konrad Seidel, Lukas M. Eng
Publikováno v:
Nanomaterials, Vol 10, Iss 2, p 384 (2020)
The microstructure of ferroelectric hafnium oxide plays a vital role for its application, e.g., non-volatile memories. In this study, transmission Kikuchi diffraction and scanning transmission electron microscopy STEM techniques are used to compare t
Externí odkaz:
https://doaj.org/article/f0ee31aa85974584bd9a5b207a0b9b1f
Autor:
Yogadissen Andee, Jan Hoentschel, Irfan Saadat, Florent Ravaux, Amal Al Ghaferi, Dirk Utess, Dominik Kleimaier, Zhixing Zhao, Steffen Lehmann, Karen Sloyan
Publikováno v:
IEEE Transactions on Electron Devices. 68:3230-3237
In this work, we study and characterize the layout-induced device strain and its impact on RF performance of 22-nm-ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FDSOI) P-channel field-effect transistor (PFET). This will he
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c567c43566c52b61f9f1605404678e66
https://doi.org/10.1109/ted.2021.3077828
https://doi.org/10.1109/ted.2021.3077828
Autor:
Zhixing Zhao, Steffen Lehmann, Wei Lun Oo, Amit Kumar Sahoo, Shafi Syed, Quang Huy Le, Dang Khoa Huynh, Talha Chohan, Dirk Utess, Dominik Kleimaier, Maciej Wiatr, Sabine Kolodinski, Jerome Mazurier, Jan Hoentschel, Andreas Knorr, Ned Cahoon, Stefan Kneitz
Publikováno v:
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bef3e5c3d875db0c12f48ec8f64e10b
https://doi.org/10.1109/bcicts50416.2021.9682480
https://doi.org/10.1109/bcicts50416.2021.9682480
Publikováno v:
Microscopy and Microanalysis. 26:660-662
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7d1338c1af1352913a69bd57510be66
https://doi.org/10.1017/s1431927620015433
https://doi.org/10.1017/s1431927620015433
Autor:
Johannes Müller, Antoine Benoist, Konrad Seidel, Dirk Utess, Andreas Hellmich, Stefan Müller, Menno Mennenga, Ali Pourkeramati, Thomas Kampfe, Halid Mulaosmanovic, Martin Trentzsch, Jan Paul, Thomas Mikolajick, Haidi Zhou, Maximilian Lederer, M. Schuster, Fabio Tassan, J. Ocker, M. Noack, Evelyn T. Breyer, Tarek Ali, Sven Beyer, Dominik Kleimaier, John Pellerin, Stefan Slesazeck, Stefan Dunkel, R. Hoffmann, Franz Muller
Publikováno v:
2020 IEEE International Memory Workshop (IMW).
With the discovery of ferroelectricity in HfO 2 based thin films and the co-integration of ferroelectric field effect transistors (FeFET) into standard high-k metal gate (HKMG) CMOS platforms, the FeFET has emerged from a theoretical dream to an appl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aad8e14efc2882797806718d2a0b6aeb
https://doi.org/10.1109/imw48823.2020.9108150
https://doi.org/10.1109/imw48823.2020.9108150
Autor:
David Barge, Cyrille Le Royer, Anita Peeva, Thomas Feudel, Jens-Uwe Sachse, Heyne Tobias, Judson R. Holt, Aydin Omur Isil, Timothy J. McArdle, Markus Lenski, Christoph Klein, Laks Vanamurthy, Alexis Divay, Carsten Peters, Mulfinger George R, Elliot John Smith, Dirk Utess, Ralf Gerber, Steffen Lehmann, Sören Jansen
Publikováno v:
ECS Transactions. 86:199-206
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3819cee07309788290de4beede1db09c
https://doi.org/10.1149/08607.0199ecst
https://doi.org/10.1149/08607.0199ecst
Autor:
Klaus Hempel, S. Mutas, Kornelia Dittmar, J. K. Schaeffer, V. Jaschke, Dina H. Triyoso, Markus Lenski, Susanne Ohsiek, J. Shu, Dirk Utess
Publikováno v:
ECS Journal of Solid State Science and Technology. 2:N222-N227
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7ba90586c3efd67f8ffff7699ca61a4
https://doi.org/10.1149/2.022311jss
https://doi.org/10.1149/2.022311jss
Autor:
Ömür Işıl Aydin, Judson Robert Holt, Laks Vanamurthy, Thomas Feudel, Cyrille Le Royer, Tobias Heyne, Ralf Gerber, Markus Lenski, George Robert Mulfinger, Timothy J McArdle, Sören Jansen, Dirk Utess, Christoph Klein, Anita Peeva, David Barge, Alexis Divay, Steffen Lehmann, Elliot Smith, Carsten Peters, Jens-Uwe Sachse
Publikováno v:
ECS Meeting Abstracts. :1072-1072
Recently, a 22nm fully depleted gate-first SOI technology (FDSOI) has shown significant promise as a low-cost alternative to FinFETs with devices that are tunable between low-leakage and high-performance regimes. [1] The 22nm FDSOI PFET utilizes a Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b7276ffa88fa0c2f0ac48deaf01e592
https://doi.org/10.1149/ma2018-02/31/1072
https://doi.org/10.1149/ma2018-02/31/1072
Autor:
Eckhard Langer, Moritz Andreas Meyer, Pascal Limbecker, Dirk Utess, Axel Preusse, Oliver Aubel, Steffi Thierbach
Publikováno v:
EDFA Technical Articles. 10:24-29
With the introduction of 65 nm technology, the cross-sectional dimensions of copper interconnect in some layers are now smaller than 100 nm, which translates to current densities on the order of several MA/cm2. Electromigration as a root cause for ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a922ac8751921be4fe2d67f20b6fd91e
https://doi.org/10.31399/asm.edfa.2008-1.p024
https://doi.org/10.31399/asm.edfa.2008-1.p024
Autor:
K. Seidell, Kornelia Dittmar, Mark Gerard Nolan, Dina H. Triyoso, M. Licbau, M. Weisheit, Robert Fox, Patrick Polakowski, Dirk Utess, Wenke Weinreich, Susanne Ohsiek
Publikováno v:
ICICDT
Decoupling MIM capacitors are typically implemented to reduce power supply noise. In this work we reported characterization of Atomic Layer Deposited (ALD) Ta 2 O 5 and Hf-doped Ta 2 O 5 high-k MIM capacitors. We investigated the impact of precursor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed9f3aa011476e361ca20f2eef6e5cf8
https://doi.org/10.1109/icicdt.2014.6838595
https://doi.org/10.1109/icicdt.2014.6838595