Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Dirk Rondas"'
Autor:
Yosuke Kimura, Kurt Wostyn, Naoto Horiguchi, Hiroaki Arimura, Thierry Conard, Dirk Rondas, Lars-Ake Ragnarsson, Andriy Hikavyy
Publikováno v:
Solid State Phenomena. 314:49-53
The steam oxidation of SiGe shows a transition from Si-like to Ge-like oxidation behavior depending on Ge concentration and oxidation temperature. Ge-like oxidation is described by the generation of oxygen vacancies (VO) at the interface between the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e89f989638b1677a358a89940ce9dea
https://doi.org/10.4028/www.scientific.net/ssp.314.49
https://doi.org/10.4028/www.scientific.net/ssp.314.49
Autor:
Lars-Ake Ragnarsson, Kana Komori, Roger Loo, Thierry Conard, Kurt Wostyn, Dirk Rondas, Jana Loya Prado, Frank Holsteyns, Naoto Horiguchi
Publikováno v:
ECS Transactions. 80:141-146
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b536c8e6e7997d3301943bed6649fe18
https://doi.org/10.1149/08002.0141ecst
https://doi.org/10.1149/08002.0141ecst
Autor:
Kurt Wostyn, Frank Holsteyns, Adrian Chasin, Lars-Ake Ragnarsson, Roger Loo, Thierry Conard, Hiroaki Arimura, Dirk Rondas, Naoto Horiguchi
Publikováno v:
ECS Transactions. 93:71-72
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a220b0834a8cf77e0aaeed1203a01af4
https://doi.org/10.1149/09301.0071ecst
https://doi.org/10.1149/09301.0071ecst
Autor:
Roger Loo, Dirk Rondas, Sathish Kumar Dhayalan, Paul Mertens, Harald Benjamin Profijt, Bastien Douhard, Karine Kenis, Frank Holsteyns, Alain Moussa, Kurt Wostyn, Andriy Hikavyy, Stefan De Gendt
Publikováno v:
Solid State Phenomena. 219:20-23
Epitaxial growth requires a clean starting surface for the growth of a high-quality crystalline layer. For epitaxy on Si, an HF-last wet clean followed by an in-situ high-temperature hydrogen bake is the reference pre-epi clean sequence to obtain an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9f972e96e1eee5499996435dbb56c6e
https://doi.org/10.4028/www.scientific.net/ssp.219.20
https://doi.org/10.4028/www.scientific.net/ssp.219.20
Autor:
Karine Kenis, Sathish Kumar Dhayalan, Frank Holsteyns, Kurt Wostyn, Gavin Simpson, Karthik Swaminathan, Paul Mertens, Gerhard Bast, Dirk Rondas, Stefan De Gendt, Roger Loo, Bastien Douhard, Andriy Hikavyy
Publikováno v:
ECS Transactions. 64:989-995
Inline light scattering measurements are frequently used to determine wafer quality and cleanliness. In this paper we will show how this technique can be extended to determine the crystalline quality after hetero-epitaxy. Misfits on the surface of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62b535d3b2a4225457a7c92118121637
https://doi.org/10.1149/06406.0989ecst
https://doi.org/10.1149/06406.0989ecst
Autor:
Roger Loo, Karine Kenis, Luc Van Autryve, Bastien Douhard, Frank Holsteyns, Dirk Rondas, Paul Mertens, Lucia D'Urzo, Kurt Wostyn, Andriy Hikavyy, Stefan De Gendt
Publikováno v:
ECS Meeting Abstracts. :1825-1825
A H-terminated Si surface serves as the starting surface for hetero-epitaxial growth. The presence of oxygen on the wafer surface caused by surface re-oxidation can significantly reduce the epitaxial quality. In this paper we evaluated the capabiliti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ffb30bb0d94085198babc73bf2998af
https://doi.org/10.1149/ma2014-02/35/1825
https://doi.org/10.1149/ma2014-02/35/1825