Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Dirk Meder"'
Autor:
Richard Reiner, Thomas Kaden, Fouad Benkhelifa, Rudiger Quay, Sebastian Mansfeld, Ingmar Kallfass, Dirk Meder, Jan Huckelheim, M. Zink, Stefan Noll, Patrick Waltereit, Stefan Moench, Nicola Mingirulli
Publikováno v:
IEEE Transactions on Power Electronics. 36:83-86
A low-inductive half-bridge and gate driver package with on-package gate and dc-link capacitors is realized by printed circuit board (PCB) embedding of two GaN-on-Si ICs. While monolithic half-bridge and driver integration reduces on-chip parasitics,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2886ef3570486d000269a285cf56fed7
https://doi.org/10.1109/tpel.2020.3005621
https://doi.org/10.1109/tpel.2020.3005621
Autor:
Patrick Waltereit, Beatrix Weiss, Oliver Ambacher, Michael Dammann, Richard Reiner, Thomas Gerrer, Matthias Sinnwell, Stefan Moench, Dirk Meder, Rudiger Quay
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
This work presents a Si-substrate removal technique for AlGaN/GaN devices on PCB carriers. The Si-removal method is explained and experimentally applied to PCB-embedded AlGaN/GaN-on-Si devices. The PCB-embedding package is reopened at the thermal pad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e562247997aaeb251b643f7f3691b6e0
https://doi.org/10.1109/ispsd46842.2020.9170078
https://doi.org/10.1109/ispsd46842.2020.9170078
Autor:
Dirk Meder, Michael Basler, Rudiger Quay, Patrick Waltereit, Richard Reiner, Stefan Moench, Ingmar Kallfass, Oliver Ambacher
Publikováno v:
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
The work shows that the efficiency of symmetrical monolithic normally-off GaN half-bridges on semi-floating Si-substrate depends on load current polarity, unlike discrete half-bridges. Discrete and monolithic half-bridges with intrinsic reverse diode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a22fbaf63f0c4ec6c9cc2771cad0fc1
https://doi.org/10.1109/wipda46397.2019.8998934
https://doi.org/10.1109/wipda46397.2019.8998934
Publikováno v:
2018 Asia-Pacific Microwave Conference (APMC).
In this paper, planar hybrid assembly is investigated as a cost-effective alternative to waveguide and radial power combining of high-power GaN MMICs. To that end, a low-loss three-section branch-line coupler is developed and used as a power divider/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2990f684f8f8d8479cc1693b410cf9f5
https://doi.org/10.23919/apmc.2018.8617424
https://doi.org/10.23919/apmc.2018.8617424
Autor:
Alexander Dyck, Markus Rosch, Dirk Meder, Sandrine Wagner, Oliver Ambacher, Arnulf Leuther, Birgit Weismann-Thaden, Hermann Masler, M. Kuri, Axel Tessmann, Michael Schlechtweg
Publikováno v:
2018 International Workshop on Antenna Technology (iWAT).
In this paper we demonstrate an antenna for 300 GHz. The antenna is processed on quartz and consists of 2 quartz layers with 2 metal layers each, which are separated by benzocyclobutene (BCB). The edge length is 2 millimeters. Design, simulation and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59637f11b61620f4e41906dfb46675ce
https://doi.org/10.1109/iwat.2018.8379183
https://doi.org/10.1109/iwat.2018.8379183
Autor:
Thomas Zwick, Thomas Merkle, Christian Friesicke, Sebastian Krause, Roger Lozar, Philipp Neininger, Dirk Meder, Rudiger Quay
Publikováno v:
2017 47th European Microwave Conference (EuMC).
In this paper, a broadband Sequential Power Amplifier (SPA) is designed and realized for the use in an active MIMO antenna around 3.5 GHz. For that purpose, specifications for the individual components are derived to yield optimum performance of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::243672f64ede5a281878648f4670e490
https://doi.org/10.23919/eumc.2017.8230855
https://doi.org/10.23919/eumc.2017.8230855
Autor:
Oliver Ambacher, Richard Reiner, Michael Mikulla, Dirk Meder, Patrick Waltereit, M. Wespel, Beatrix Weiss, Rudiger Quay
Publikováno v:
2016 IEEE Applied Power Electronics Conference and Exposition (APEC).
This work presents a high-voltage GaN-based power HEMT with a highly-linear, monolithically-integrated temperature sensor. The principle is shown and compared to other concepts. The sensor is fabricated by using a interconnect metallization without a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d53cb2413ca478fbb0832efcb1cc8e91
https://doi.org/10.1109/apec.2016.7468154
https://doi.org/10.1109/apec.2016.7468154