Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Dirk Klaes"'
Autor:
Michel Kühn, Christian Berndt, Sebastian F. L. Watt, Matthew J. Hornbach, Sebastian Krastel, Kristina Sass, Steffen Kutterolf, Tim Freudenthal, Katrin Huhn, Jens Karstens, Bettina Schramm, Judith Elger, Christoph Böttner, Dirk Klaeschen
Publikováno v:
Geochemistry, Geophysics, Geosystems, Vol 25, Iss 6, Pp n/a-n/a (2024)
Abstract Volcanic flank collapses, especially those in island settings, have generated some of the most voluminous mass transport deposits on Earth and can trigger devastating tsunamis. Reliable tsunami hazard assessments for flank collapse‐driven
Externí odkaz:
https://doaj.org/article/3cd8d735dbf94ff69e42872a395e965c
Autor:
Bo Ma, Jacob Geersen, Dietrich Lange, Dirk Klaeschen, Ingo Grevemeyer, Eduardo Contreras-Reyes, Florian Petersen, Michael Riedel, Yueyang Xia, Anne M. Tréhu, Heidrun Kopp
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-8 (2022)
The rupture area of the 2014 Iquique earthquake offshore northern Chile was spatially limited to a region where the plate boundary is non-reflective in seismic images, indicative of low fluid pressure. In contrast, north and updip of the rupture area
Externí odkaz:
https://doaj.org/article/1caafe5d1ea7499eb70e6432703708e8
Autor:
Hans Lüth, S. Wickenhäuser, L. Vescan, Michel Marso, J. Moers, Dirk Klaes, A. Tonnesmann, T. Grabolla, Peter Kordos
Publikováno v:
Solid-State Electronics. 43:529-535
A novel vertical MOSFET concept using selective epitaxial growth by low pressure chemical vapor deposition is proposed and the first p-channel device characteristics measured are described. In contrast to other MOS technologies, the gate oxide is dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c855d76213b8abcf260002c752a6920
https://doi.org/10.1016/s0038-1101(98)00301-3
https://doi.org/10.1016/s0038-1101(98)00301-3
Autor:
A. Tonnemann, Hans Lüth, L. Vescan, S. Wickenhauser, M. Marso, Dirk Klaes, Peter Kordos, J. Moers, T. Grabolla
Publikováno v:
Thin Solid Films. 336:306-308
Vertical p-MOS transistors with channel length of 130 nm have been fabricated using selective epitaxial growth (SEG) to define the channel region. The vertical layout offers the advantages of achieving short channel lengths and high integration densi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2294537f70f81265e57b57d187e2aa4
https://doi.org/10.1016/s0040-6090(98)01248-6
https://doi.org/10.1016/s0040-6090(98)01248-6
Autor:
Michel Marso, Peter Kordos, A. Tonnesmann, L. Vescan, Dirk Klaes, A. Fox, Hans Lüth, A. van der Hart, J. Moers
Publikováno v:
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3eb0fcc27d0433d2caa6e78ff8274330
https://doi.org/10.1109/asdam.2000.889454
https://doi.org/10.1109/asdam.2000.889454
Autor:
Hans Lüth, Michel Marso, L. Vescan, A. Tonnesmann, S. Wickenhäuser, Dirk Klaes, J. Moers, Peter Kordos
Publikováno v:
Electronics Letters. 35:239
Vertical Si p-MOSFETs with channel lengths of 100 nm were fabricated using selective low pressure chemical vapour deposition (LPCVD) epitaxial growth and conventional i-line lithography. The layout, called VOXFET, reduces gate to source/drain overlap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fe15d3bf9387f193f7fe7fa1da05d17
https://doi.org/10.1049/el:19990138
https://doi.org/10.1049/el:19990138