Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Dirk Fahle"'
Autor:
Walter Gonçalez Filho, Matteo Borga, Karen Geens, Deepthi Cingu, Urmimala Chatterjee, Sourish Banerjee, Anurag Vohra, Han Han, Albert Minj, Herwig Hahn, Matthias Marx, Dirk Fahle, Benoit Bakeroot, Stefaan Decoutere
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-12 (2023)
Abstract This work reports the epitaxial growth of 8.5 µm-thick GaN layers on 200 mm engineered substrates with a polycrystalline AlN core (QST by QROMIS) for CMOS compatible processing of vertical GaN power devices. The epitaxial stack contains a 5
Externí odkaz:
https://doaj.org/article/5ea9232b349f46428755a2c055e14194
Autor:
Mamta Pradhan, Mohammed Alomari, Matthias Moser, Dirk Fahle, Herwig Hahn, Michael Heuken, Joachim N. Burghartz
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 748-755 (2021)
In this work, the dynamic behavior of gallium nitride on silicon high electron mobility transistors (GaN/Si HEMT) with carbon doped buffer is modeled using a finite state machine embedded into the core Advanced SPICE Model for High Electron Mobility
Externí odkaz:
https://doaj.org/article/e8048e097cbd4bdabb15a26b5cde3f5d
Autor:
Herwig Hahn, Joachim N. Burghartz, Michael Heuken, Mamta Pradhan, Matthias Moser, Dirk Fahle, Mohammed Alomari
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 748-755 (2021)
In this work, the dynamic behavior of gallium nitride on silicon high electron mobility transistors (GaN/Si HEMT) with carbon doped buffer is modeled using a finite state machine embedded into the core Advanced SPICE Model for High Electron Mobility
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26ec020adcc474c9071432ce6dee8365
https://ieeexplore.ieee.org/document/9509414/
https://ieeexplore.ieee.org/document/9509414/
Autor:
Holger Kalisch, Lars Heuken, M. Marx, M. Schroder, Alessandro Ottaviani, Michael Heuken, Mohammed Alomari, Andrei Vescan, Joachim N. Burghartz, Dirk Fahle, M. Kortemeyer
Publikováno v:
IEEE Transactions on Electron Devices. 67:1113-1119
In this article, an optimized carbon-doped AlGaN/AlN super-lattice (SL) buffer structure for GaN-based high electron mobility transistors, grown on 200-mm Si wafers is demonstrated. The resulting transistor structure features: 1) maximum vertical bre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adabe0307449ef51c4ce09ba6789a454
https://doi.org/10.1109/ted.2020.2968757
https://doi.org/10.1109/ted.2020.2968757
Autor:
Ming Zhao, Stefaan Decoutere, Dirk Fahle, Xiangdong Li, Vladimir Odnoblyudov, Shuzhen You, Guido Groeseneken, Weiming Guo, Karen Geens
Publikováno v:
IEEE Electron Device Letters. 40:1499-1502
Co-integration of the key power stage, namely gate drivers and half-bridge in a single-die solution, is a tremendous and inevitable challenge to realizing GaN power integrated circuits (GaN power ICs). In this letter, a monolithically integrated GaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ad27ea1e7a485bdc1a58903d90e5d63
https://doi.org/10.1109/led.2019.2929417
https://doi.org/10.1109/led.2019.2929417
Autor:
Anurag Vohra, Karen Geens, Ming Zhao, Olga Syshchyk, Herwig Hahn, Dirk Fahle, Benoit Bakeroot, Dirk Wellekens, Benjamin Vanhove, Robert Langer, Stefaan Decoutere
Publikováno v:
Applied Physics Letters. 120:261902
In this work, we demonstrate the epitaxial growth of a gallium-nitride (GaN) buffer structure qualified for 1200 V applications on 200 mm engineered poly-AlN substrates with hard breakdown >1200 V. The manufacturability of a 1200 V qualified buffer s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3255bd148726e4f08d1a35b256a203ff
https://doi.org/10.1063/5.0097797
https://doi.org/10.1063/5.0097797
Autor:
Carlo De Santi, B. Jonas Ohlsson, Dirk Fahle, Herwig Hahn, Kalparupa Mukherjee, Martin Berg, Matteo Borga, Michael Heuken, Karen Geens, Peter Ramvall, Stefaan Decoutere, Shuzhen You, Matteo Meneghini, Mikael T. Björk, Enrico Zanoni, Hu Liang, Ashutosh Kumar
Publikováno v:
Microelectronics Reliability
This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible technology. We particularly demonstrated the potential of using 200 mm d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e32a9fc8bb80660196396aa65efdfa87
Autor:
Sven Besendörfer, Hannes Behmenburg, Jochen Friedrich, Tobias Erlbacher, Holger Kalisch, Dirk Fahle, Hady Yacoub, Andrei Vescan, Elke Meissner, Thorsten Zweipfennig
Publikováno v:
AIP Advances
AIP Advances, Vol 10, Iss 4, Pp 045028-045028-6 (2020)
AIP Advances 10(4), 045028 (2020). doi:10.1063/1.5141905
AIP Advances, Vol 10, Iss 4, Pp 045028-045028-6 (2020)
AIP Advances 10(4), 045028 (2020). doi:10.1063/1.5141905
AIP Advances 10(4), 045028 (2020). doi:10.1063/1.5141905
Published by American Inst. of Physics, New York, NY
Published by American Inst. of Physics, New York, NY
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17babc08065a2d2f01a5ee2fbac67c79
https://publica.fraunhofer.de/handle/publica/262275
https://publica.fraunhofer.de/handle/publica/262275
Autor:
M. Eickelkamp, Hady Yacoub, Michael Heuken, Holger Kalisch, Thorsten Zweipfennig, Gerrit Lükens, Dirk Fahle, Hannes Behmenburg, Andrei Vescan
Publikováno v:
IEEE Transactions on Electron Devices. 65:3192-3198
The impact of the extrinsic carbon doping level was investigated with the aim of finding the optimal level for GaN-on-Si HFETs. A tradeoff between the crystal quality degradation by carbon doping and dynamic properties of HFET structures was observed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c3782e3187693bb4930f9d50cede1c5
https://doi.org/10.1109/ted.2018.2850066
https://doi.org/10.1109/ted.2018.2850066
Autor:
Dirk Fahle, Michael Heuken, Hady Yacoub, Stefano Leone, Andrei Vescan, Holger Kalisch, C. Mauder, M. Eickelkamp
Publikováno v:
IEEE Transactions on Electron Devices. 64:991-997
The effect of different carbon doping techniques on the dynamic behavior of GaN-on-Si buffer was investigated. Intentional doping using a hydrocarbon precursor was compared with the more common autodoping technique. Breakdown and dynamic behavior of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e214c759830cdabeff1f35c504cdb6f9
https://doi.org/10.1109/ted.2017.2647841
https://doi.org/10.1109/ted.2017.2647841