Zobrazeno 1 - 10
of 62
pro vyhledávání: '"Dirk Ehrentraut"'
Autor:
Dirk Ehrentraut, Jonathan D. Cook, Rajeev T. Pakalapati, Wenkan Jiang, Derrick S. Kamber, Mark P. D'Evelyn
Publikováno v:
physica status solidi (b). 252:1069-1074
A novel, highly scalable apparatus has been employed to perform high temperature ammonothermal growth of (0001) GaN bulk crystals up to 52 mm in diameter and to a thickness of greater than 2 mm. X-ray characterization of the crystals shows excellent
Autor:
Dirk Ehrentraut, Mark P. D'Evelyn, Hak Do Yoo, Rajeev T. Pakalapati, Derrick S. Kamber, Wenkan Jiang, Bradley C. Downey
Publikováno v:
Journal of Crystal Growth. 403:18-21
A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in. The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM),
Autor:
Yuantao Zhang, Tsuguo Fukuda, Chin Chun Ooi, Masataka Kano, Katsushi Fujii, Dirk Ehrentraut, Gregory K. L. Goh, Le Hong Quang, Takashi Matsuoka
Publikováno v:
Journal of Solid State Chemistry. 214:96-100
The aqueous synthesis of uniform single crystalline homoepitaxial zinc oxide, ZnO, and magnesium zinc oxide, Mg x Zn 1− x O, films under very low temperature conditions at T =90 °C and ambient pressure has been explored. A maximum Mg content of 1
Autor:
Mark P. D'Evelyn, Derrick S. Kamber, Hak Do Yoo, Wenkan Jiang, Dirk Ehrentraut, Rajeev T. Pakalapati, Bradley C. Downey
Publikováno v:
ECS Transactions. 58:287-294
Soraa has developed a novel ammonothermal approach for growth of high quality, true bulk GaN crystals at a greatly reduced cost, known as SCoRA (Scalable Compact Rapid Ammonothermal). SCoRA GaN growth has been performed on seed crystals with diameter
Autor:
Keerthiraj Namratha, I. A. Ibrahim, Kullaiah Byrappa, Masahiro Yoshimura, V. Ravishankar Rai, Jamuna Bai, Dirk Ehrentraut
Publikováno v:
Materials Focus. 2:136-142
Organics assisted ZnO nanoparticles doped with Pd (1 - 5 × 10 -7 mmol) were synthesized using novel solution processing routes. In situ surface modification was carried out by using gluconic acid as a modifier to assist the nanoparticles synthesis.
Autor:
Marilou Cadatal-Raduban, Yuki Minami, Hiroshi Azechi, Kohei Yamanoi, Dirk Ehrentraut, Momoko Tanaka, Nobuhiko Sarukura, T. Shimizu, Kohei Takeda, Tomoharu Nakazato, T. Fukuda, Hiroaki Nishimura, K. Sakai, Tetsuya Kawachi, Masaharu Nishikino, Ryosuke Nishi
Publikováno v:
IEEE Transactions on Nuclear Science. 59:2294-2297
We show that a hydrothermal method-grown ZnO is a potential material of an imaging device for soft X-ray laser diagnostics. The beam profile of a soft X-ray laser was evaluated by characterizing the exciton emission patterns of ZnO. The single shot i
Autor:
Martin Nikl, Tsuguo Fukuda, Katsushi Fujii, Kullaiah Byrappa, Juergen Riegler, Dirk Ehrentraut
Publikováno v:
Progress in Crystal Growth and Characterization of Materials. 58:51-59
Crystalline zinc oxide (ZnO) has been fabricated by solvothermal techniques under quite different temperature and pressure environment stretching from sub- to supercritical conditions. Among them, one-step processing of inorganic–inorganic hybrid Z
Publikováno v:
Journal of Crystal Growth. 320:18-22
Zinc oxide (ZnO) crystals were grown by the hydrothermal method under significantly improved conditions. Careful adjustment of critical growth conditions led the way towards ZnO crystals with extremely low ( 14 cm −3 ) lithium and potassium content
Autor:
Kohei Yamanoi, Dirk Ehrentraut, Tsuguo Fukuda, Nobuhiko Sarukura, Masaharu Nishikino, Tetsuya Kawachi, Momoko Tanaka, Toshihiko Shimizu, Tomoharu Nakazato, Kohei Sakai
Publikováno v:
The Review of Laser Engineering. 39:193-196
Autor:
Dirk Ehrentraut, Tsuguo Fukuda
Publikováno v:
Journal of Crystal Growth. 312:2514-2518
The acidic ammonothermal technique is used to develop a technology for production of free-standing gallium nitride (GaN) crystals to match the demand driven by the device technology for the wide-band-gap semiconductor group-III element nitrides. Here