Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Dippell, T."'
Autor:
Veith, B., Dullweber, T., Siebert, M., Kranz, C., Werner, F., Harder, N.-P., Schmidt, J., Roos, B.F.P., Dippell, T., Brendel, R.
Publikováno v:
In Energy Procedia 2012 27:379-384
Akademický článek
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38th European Photovoltaic Solar Energy Conference and Exhibition; 147-149
This article reports on using direct current (DC) sputter deposition of Si for passivating polysilicon on oxide (POLO) contacts. We measure the doping density in DC-sputt
This article reports on using direct current (DC) sputter deposition of Si for passivating polysilicon on oxide (POLO) contacts. We measure the doping density in DC-sputt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7328458d4206ab66f30471dd34759f8c
Autor:
David, L., Hübner, S., Min, B., Hollemann, C., Dippell, T., Wohlfart, P., Peibst, R., Brendel, R.
37th European Photovoltaic Solar Energy Conference and Exhibition; 184-187
We demonstrate poly-Si-based electron-collecting passivating contacts realized with physical vapor deposition by sputtering. The junction formation and the dopant activat
We demonstrate poly-Si-based electron-collecting passivating contacts realized with physical vapor deposition by sputtering. The junction formation and the dopant activat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdff99ac8c75e561cacc6efc03871f11
Autor:
Hofmann, M., Wagenmann, D., Teßmann, C., Jäcklein, M., Saint-Cast, P., Eberlein, D., Kraft, A., Dippell, T., May, F., Dörr, M., Cord, B., Schütte, T., Neiß, P., Eichhorn, L., Klick, M., Richter, U., Siemers, M., Wiedemuth, P.
35th European Photovoltaic Solar Energy Conference and Exhibition; 385-389
Very thin aluminum oxide passivation films (3.7 nm) are developed using ICP PECVD and applying plasma simulation (particle-in-cell Monte Carlo method), in-situ plasma cha
Very thin aluminum oxide passivation films (3.7 nm) are developed using ICP PECVD and applying plasma simulation (particle-in-cell Monte Carlo method), in-situ plasma cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7aca8c8bc9790db876d0641ba6168cd
Autor:
Hofmann, M., Jäcklein, M., Saint-Cast, P., Wagenmann, D., Cord, B., Dippell, T., Dörr, M., Schütte, T., Siemers, M.
32nd European Photovoltaic Solar Energy Conference and Exhibition; 345-349
The detailed analysis of the ICP-PECVD plasma process using spectroscopic plasma monitoring and the ex-situ analysis of the manufactured layers and interfaces to the c-Si
The detailed analysis of the ICP-PECVD plasma process using spectroscopic plasma monitoring and the ex-situ analysis of the manufactured layers and interfaces to the c-Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e47d030e0b5947674c9d2405ec9fbc66
Akademický článek
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Autor:
Denafas, J., Petreniene, L., Meskereviciene, K., Pranaitis, M., Stonkus, A., Juzumas, V., Dippell, T., Hain, A.
31st European Photovoltaic Solar Energy Conference and Exhibition; 525-530
Rear passivated c-Si solar cells with local contacts (PERC - Passivated Emitter and Rear Cell) have been shown to be an evolutionary next generation cell type that allows
Rear passivated c-Si solar cells with local contacts (PERC - Passivated Emitter and Rear Cell) have been shown to be an evolutionary next generation cell type that allows
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c08a0f440d9fe4b5a2e2c0eceedae09f
Akademický článek
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Autor:
Tang, M., Ge, J., Wong, J., Ling, Z.P., Huber, M.R., Zhang, Z., Dörr, M., Dippell, T., Hohn, O., Wohlfart, P., Aberle, A.G., Mueller, T.
29th European Photovoltaic Solar Energy Conference and Exhibition; 966-968
This paper describes the development of a hydrogen plasma etching process to substitute the commonly applied hydrofluoric acid dip prior to surface passivation of crystal
This paper describes the development of a hydrogen plasma etching process to substitute the commonly applied hydrofluoric acid dip prior to surface passivation of crystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::734fe66c9825a021af95bb562359de01