Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Dipjyoti Deb"'
Autor:
Muhammad Bilal Khan, Dipjyoti Deb, Jochen Kerbusch, Florian Fuchs, Markus Löffler, Sayanti Banerjee, Uwe Mühle, Walter M. Weber, Sibylle Gemming, Jörg Schuster, Artur Erbe, Yordan M. Georgiev
Publikováno v:
Applied Sciences, Vol 9, Iss 17, p 3462 (2019)
We present results of our investigations on nickel silicidation of top-down fabricated silicon nanowires (SiNWs). Control over the silicidation process is important for the application of SiNWs in reconfigurable field-effect transistors. Silicidation
Externí odkaz:
https://doaj.org/article/4ab65644612848678e8a47bc7a88f78b
Autor:
Dipjyoti Deb
Publikováno v:
Synergistic Interaction of Big Data with Cloud Computing for Industry 4.0 ISBN: 9781003279044
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7963921f046925ddedf2344b2e05e22
https://doi.org/10.1201/9781003279044-13
https://doi.org/10.1201/9781003279044-13
Autor:
Thomas Mikolajick, Dipjyoti Deb, René Hübner, Sayantan Ghosh, Lars Rebohle, Muhammad Bilal Khan, Darius Pohl, Slawomir Prucnal, Yordan M. Georgiev, Artur Erbe
Publikováno v:
Langmuir
Langmuir 37(2021)49, 14284-14291
Langmuir 37(2021)49, 14284-14291
Among other new device concepts, nickel silicide (NiSix)-based Schottky barrier nanowire transistors are projected to supplement down-scaling of the complementary metal-oxide-semiconductor (CMOS) technology as its physical limits are reached. Control
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ebb228682a2b1c0a38965101efa2f92
https://pubmed.ncbi.nlm.nih.gov/34860534
https://pubmed.ncbi.nlm.nih.gov/34860534
Autor:
Sibylle Gemming, Yordan M. Georgiev, Jörg Schuster, Walter M. Weber, Artur Erbe, Florian Fuchs, Dipjyoti Deb, Darius Pohl, Uwe Mühle, Muhammad Bilal Khan, Markus Löffler
Publikováno v:
Journal of Applied Physics. 128:085301
The transport properties of novel device architectures depend strongly on the morphology and the quality of the interface between contact and channel materials. In silicon nanowires with nickel silicide contacts, NiSi 2–Si interfaces are particular
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e280fea3d720acd0b1787610855221a
https://doi.org/10.1063/1.5143122
https://doi.org/10.1063/1.5143122