Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Dipak Ramdas Nagapure"'
Autor:
Mukul Gupta, Y.P. Venkata Subbaiah, M. Anantha Sunil, R. Prasada Rao, Dipak Ramdas Nagapure, G. Hema Chandra, Rhishikesh Mahadev Patil
Publikováno v:
Materials Science in Semiconductor Processing. 87:77-85
The incorporation of germanium into Cu2ZnSn(S,Se)4 thin films is gaining a massive attention because of its potential to tailor the properties of kesterite absorbers resulting in high efficiency solar photovoltaic devices. The present work reports th
Autor:
Mukul Gupta, G. Hema Chandra, M. Anantha Sunil, Dipak Ramdas Nagapure, R. Prasada Rao, Rhishikesh Mahadev Patil, Y.P. Venkata Subbaiah
Publikováno v:
Superlattices and Microstructures. 110:252-264
The Cu2ZnSnSe4(CZTSe) thin films were prepared by a two-step process consisting of high vacuum sequential evaporation of precursors stack (Sn/Se/ZnSe/Se/Cu/Se) in 4-folds followed by selenization at 350 °C in tubular furnace under varied argon gas p
Autor:
G. Hema Chandra, Dipak Ramdas Nagapure, M. Anantha Sunil, Y.P. Venkata Subbaiah, R. Prasada Rao, Mukul Gupta, G. Swapna Mary, P. Prathap, Rhishikesh Mahadev Patil
Publikováno v:
Journal of Materials Science: Materials in Electronics. 28:18244-18253
In the present paper, a novel process for synthesis of Cu2ZnSnSe4 thin films via low temperature selenization (350 A degrees C) of multiple stacks of binary selenides has been reported. Further, the influence of selenization temperature (250-450 A de
Autor:
Rhishikesh Mahadev Patil, Y.P. Venkata Subbaiah, R. Prasada Rao, Galli Hema Chandra, Dipak Ramdas Nagapure, Mukul Gupta
Publikováno v:
physica status solidi (a). 217:1900752
Autor:
G. Hema Chandra, Mukul Gupta, R. Prasada Rao, Y.P. Venkata Subbaiah, Dipak Ramdas Nagapure, G. Swapna Mary, M. Anantha Sunil, Rhishikesh Mahadev Patil
Publikováno v:
IndraStra Global.
Multiple stacks of precursors (Cu/Se/ZnSe/Se/Ge/Se) are deposited by electron beam evaporation followed by selenization in high vacuum at substrate temperatures ranging from 350 degrees C - 500 degrees C for 30 min to achieve device quality Cu2ZnGeSe
Autor:
G. Hema Chandra, G. Swapna Mary, Y.P. Venkata Subbaiah, M. Anantha Sunil, R. Prasada Rao, Mukul Gupta, Rhishikesh Mahadev Patil, Dipak Ramdas Nagapure
Publikováno v:
Vacuum. 133:114