Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Dip K. Nandi"'
Autor:
Minsu Kim, Shunichi Nabeya, Dip K. Nandi, Kazuharu Suzuki, Hyun-Mi Kim, Seong-Yong Cho, Ki-Bum Kim, Soo-Hyun Kim
Publikováno v:
ACS Omega, Vol 4, Iss 6, Pp 11126-11134 (2019)
Externí odkaz:
https://doaj.org/article/6022367d0dbc4a1db096c8bee428815c
Autor:
Mohd Zahid Ansari, Iftikhar Hussain, Debananda Mohapatra, Sajid Ali Ansari, Reza Rahighi, Dip K Nandi, Wooseok Song, Soo‐Hyun Kim
Publikováno v:
Advanced Science, Vol 11, Iss 1, Pp n/a-n/a (2024)
Abstract Atomic layer deposition (ALD) has become the most widely used thin‐film deposition technique in various fields due to its unique advantages, such as self‐terminating growth, precise thickness control, and excellent deposition quality. In
Externí odkaz:
https://doaj.org/article/0a2183a17d4b47ea8686a79b1fb653b4
Autor:
Na-Yeon Park, Minsu Kim, Youn-Hye Kim, Rahul Ramesh, Dip K. Nandi, Tomohiro Tsugawa, Toshiyuki Shigetomi, Kazuharu Suzuki, Ryosuke Harada, Miso Kim, Ki-Seok An, Bonggeun Shong, Soo-Hyun Kim
Publikováno v:
Chemistry of Materials. 34:1533-1543
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1cc25b9b6c7070b8f5e52c86b9e0242
https://doi.org/10.1021/acs.chemmater.1c03142
https://doi.org/10.1021/acs.chemmater.1c03142
Publikováno v:
Handbook of Nanocomposite Supercapacitor Materials IV ISBN: 9783031237003
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4ba22d3264aef5e69b936accaaa6bcc
https://doi.org/10.1007/978-3-031-23701-0_7
https://doi.org/10.1007/978-3-031-23701-0_7
Autor:
Dip K. Nandi, Seung-Min Han, Young-Bae Park, Taehoon Cheon, Youn-Hye Kim, Ryosuke Harada, Shigeyuki Ohtake, Bonggeun Shong, Kirak Son, Yohei Kotsugi, Neung-Kyung Yu, Rahul Ramesh, Tomohiro Tsugawa, Soo-Hyun Kim
Publikováno v:
Chemistry of Materials. 33:5639-5651
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4355d3c2966c3cd8a4e85dfcf26c4264
https://doi.org/10.1021/acs.chemmater.1c01054
https://doi.org/10.1021/acs.chemmater.1c01054
Autor:
Mohd Zahid Ansari, Petr Janicek, Ye Jin Park, Sook NamGung, Bo Yeon Cho, Dip K. Nandi, Yujin Jang, Jong-Seong Bae, Tae Eun Hong, Taehoon Cheon, Wooseok Song, Ki-Seok An, Soo-Hyun Kim
Publikováno v:
Applied Surface Science. 620:156834
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26702cd3df9dbf42f2a4b098e23f8ceb
https://doi.org/10.1016/j.apsusc.2023.156834
https://doi.org/10.1016/j.apsusc.2023.156834
Publikováno v:
Solar Energy. 209:515-537
CIGS-based thin film solar cell (TFSC) technology is emerging as a promising contributor to the solar photovoltaic industry next to the presently leading Si-based technology. Although the theoretical limit of power conversion efficiency (PCE) is as h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17e8036a4510fe2bd5f542870c2db364
https://doi.org/10.1016/j.solener.2020.09.022
https://doi.org/10.1016/j.solener.2020.09.022
Autor:
Soo-Hyun Kim, Tae Hyun Kim, Deok Hyun Kim, Taeho Yoon, Yujin Jang, Sandesh Y. Sawant, Dip K. Nandi, Myoung Gyu Ha, Rahul Ramesh, Seung-Min Han, Moo Hwan Cho
Publikováno v:
ChemSusChem. 13:4159-4168
Molybdenum-based compounds are considered as a potential replacement for expensive precious-metal electrocatalysts for the hydrogen evolution reaction (HER) in acid electrolytes. However, coating of thin films of molybdenum nitride or carbide on a la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a221fdf259d930d6a2f7f43af8cfc29b
https://doi.org/10.1002/cssc.202000350
https://doi.org/10.1002/cssc.202000350
Autor:
Soo-Hyun Kim, Bonggeun Shong, Rahul Ramesh, Dip K. Nandi, Mohd Zahid Ansari, Sajid Ali Ansari, Petr Janicek, Taehoon Cheon
Publikováno v:
ACS Applied Materials & Interfaces. 11:43608-43621
We present an atomic layer deposition (ALD) process for the synthesis of tin nitride (SnNx) thin films using tetrakis(dimethylamino) tin (TDMASn, Sn(NMe2)4) and ammonia (NH3) as the precursors at low deposition temperatures (70-200 °C). This newly d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70a74ef74b06324ded8ae5f42a100144
https://doi.org/10.1021/acsami.9b15790
https://doi.org/10.1021/acsami.9b15790
Publikováno v:
Chemistry of Materials. 31:8338-8350
Deposition providing precise control of the film thickness, low deposition temperature, and noncorrosive byproducts is essential for the efficient fabrication of barrier layers in semiconductor dev...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b4a8092934e1dc63d41d731eeb7ed3d
https://doi.org/10.1021/acs.chemmater.9b01578
https://doi.org/10.1021/acs.chemmater.9b01578