Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Dionysios Stefanakis"'
Publikováno v:
IEEE Transactions on Electron Devices. 68:2582-2586
A comparative study of the simulated breakdown voltage of 4H-SiC devices has been conducted for the most widely used impact ionization models (Selberherr, Hatakeyama), based on the experimental data of 4H-SiC pn diodes. The effect of mesh density on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cd41cf9dc691a947b1f5a0447fbc94e
https://doi.org/10.1109/ted.2021.3066143
https://doi.org/10.1109/ted.2021.3066143
Publikováno v:
IEEE Transactions on Electron Devices. 67:3740-3744
The impact ionization coefficients along the $\langle 11 \bar{2}0\rangle $ direction in 4H-SiC were extracted by analyzing photocurrent of mesa epitaxial p-n diodes with punchthrough (PT) structures fabricated on 4H-SiC ( $11\bar{2}0$ ). Compared wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::531da9c0c8889786cefeee3777894c92
https://doi.org/10.1109/ted.2020.3012118
https://doi.org/10.1109/ted.2020.3012118
Publikováno v:
Microelectronic Engineering. 116:65-71
A systematic study of the usually employed models of 4H-SiC bandgap energy value and carrier mobility in TCAD simulations has been performed. Theoretically calculated and experimentally determined values of these parameters are compared with the corr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a87477e294a591b1fae9440f2737f36
https://doi.org/10.1016/j.mee.2013.10.002
https://doi.org/10.1016/j.mee.2013.10.002