Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Dinh Lam Dang"'
Publikováno v:
Materials Science Forum
Materials Science Forum, Trans Tech Publications Inc., 2019, 963, pp.592-595. ⟨10.4028/www.scientific.net/MSF.963.592⟩
12th European Conference on Silicon Carbide and Related Materials
12th European Conference on Silicon Carbide and Related Materials, Sep 2018, Birmingham, United Kingdom
Materials Science Forum, Trans Tech Publications Inc., 2019, 963, pp.592-595. ⟨10.4028/www.scientific.net/MSF.963.592⟩
12th European Conference on Silicon Carbide and Related Materials
12th European Conference on Silicon Carbide and Related Materials, Sep 2018, Birmingham, United Kingdom
Silicon carbide (SiC) MOSFET features low on-resistance per area even at high temperatures compared to a silicon (Si) counterpart with the same voltage rating. However, SiC MOSFET exhibits a unique behavior over operating temperatures due to the pres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e3c0be57e191910f9f2e6731a7246d24
https://hal.univ-lorraine.fr/hal-02337818
https://hal.univ-lorraine.fr/hal-02337818
Publikováno v:
18th European Conference on Power Electronics and Applications (EPE)
18th European Conference on Power Electronics and Applications (EPE), Sep 2016, Karlsruhe, France. ⟨10.1109/EPE.2016.7695604⟩
18th European Conference on Power Electronics and Applications (EPE), Sep 2016, Karlsruhe, France. ⟨10.1109/EPE.2016.7695604⟩
International audience; 4H-SiC MOSFET have been fully characterized in the forward conduction over the temperature range -30 degrees C to 150 degrees C. The distinct characteristics of SiC MOSFET and the Si MOSFET counterpart are compared and explain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8fcd8ca7cc6963e402c484b3342edea0
https://doi.org/10.1109/epe.2016.7695604
https://doi.org/10.1109/epe.2016.7695604
