Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Dingyou Zhang"'
Publikováno v:
Horticultural Plant Journal, Vol 2, Iss 4, Pp 181-187 (2016)
Most apple orchards in the apple production districts in China were densely planted with vigorous rootstocks during the 1980s. These orchards have suffered micro-environmental deterioration and loss of fruit quality because of the closed canopy. Modi
Externí odkaz:
https://doaj.org/article/d26620a99e3447a78cb4c6d62598906c
Publikováno v:
Horticultural Plant Journal, Vol 2, Iss 4, Pp 181-187 (2016)
Most apple orchards in the apple production districts in China were densely planted with vigorous rootstocks during the 1980s. These orchards have suffered micro-environmental deterioration and loss of fruit quality because of the closed canopy. Modi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::63513e2307a7ca4695502d078323777f
http://www.sciencedirect.com/science/article/pii/S2468014116301583
http://www.sciencedirect.com/science/article/pii/S2468014116301583
Autor:
Wei Wang, Lily Zhao, Dingyou Zhang, Ahmer Syed, David Fraser Rae, Milind P. Shah, Mark Schwarz, Jiantao Zheng, Yangyang Sun
Publikováno v:
2018 IEEE 68th Electronic Components and Technology Conference (ECTC).
Chip-package interaction (CPI) is a key area for achieving robust copper bump interconnection in flip-chip packages. Polyimide (PI) has been widely used in electronic package products to provide structural support to protect electronic devices from e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::926f5a3852753c67b43d197ad91e6669
https://doi.org/10.1109/ectc.2018.00159
https://doi.org/10.1109/ectc.2018.00159
Autor:
Shinichiro Kakita, Peijie Feng, Mohamed A. Rabie, Rudy Ratnadurai Giridharan, Daniel Smith, Dingyou Zhang, Luke England, Gopal Kumarapuram, Holly Edmundson
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 28:454-460
This paper presents challenges encountered in the fabrication of high aspect ratio (AR) via middle, through-silicon vias (TSVs), of 3 ${\mu }\text{m}$ top entrant critical dimension and 50 ${\mu }\text{m}$ depth. Higher AR TSV integration is explored
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::840cc3c720e753c860318564ace41891
https://doi.org/10.1109/tsm.2015.2485079
https://doi.org/10.1109/tsm.2015.2485079
Autor:
Mark Scholefield, Dingyou Zhang, Tong Qing Chen, Sarasvathi Thangaraju, Wonwoo Kim, Ming Lei, Christian Klewer, Kumarapuram Gopalakrishnan, Daniel Smith, Abhishek Vikram, Himani Kamineni, Victor Lim, Ramakanth Alapati
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2014:001506-001522
This paper reports on a new type of through-silicon via (TSV) defect, silicon fin defect, which was found after TSV deep-reactive-ion-etching (DRIE) process for TSV integration with front-end-of-line (FEOL) devices. One possible root cause for this d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3476245113154b36ceb2b3146c91c946
https://doi.org/10.4071/2014dpc-wp14
https://doi.org/10.4071/2014dpc-wp14
Autor:
James J.-Q. Lu, Dingyou Zhang
Publikováno v:
Materials for Advanced Packaging ISBN: 9783319450971
Three-dimensional (3D) integration, which can stack different materials, technologies, and functional components vertically, is a promising technology to overcome some physical, technological, and economic limits encountered in planar integrated circ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccf6531017ff48251ab8ce5f2f11e171
https://doi.org/10.1007/978-3-319-45098-8_1
https://doi.org/10.1007/978-3-319-45098-8_1
Publikováno v:
2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Etch is one of the most critical processes for high-aspect ratio TSV as it defines the profile and wafer level depth uniformity of TSV, thus having a great impact on other downstream processes in TSV module and TSV backside reveal. This paper present
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97bf4798bd666cc4f480e77f0b27b410
https://doi.org/10.1109/asmc.2016.7491096
https://doi.org/10.1109/asmc.2016.7491096
Autor:
Dingyou Zhang, Jian-Qiang Lu
Publikováno v:
ECS Transactions. 41:93-102
We report on designs of Benzocyclobutene (BCB) templates for chip-to-wafer (C2W) alignment in 3D integration, in order to effectively reduce the wafer bow and improve the alignment accuracy and wafer-level uniformity. The BCB template enables well-co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c62ae68eccef990c517c953d94d71d0
https://doi.org/10.1149/1.4717507
https://doi.org/10.1149/1.4717507
Autor:
Litian Liu, Adam Beece, Qianwen Chen, Jian-Qiang Lu, Zheng Xu, Robert Patti, Zhimin Tan, Zheyao Wang, Dingyou Zhang
Publikováno v:
Microelectronic Engineering. 92:15-18
This paper reports a novel chip-to-wafer (C2W) three-dimensional (3D) integration approach using a template for precise alignment. The key unit process steps, including template fabrication, chip edge definition, C2W alignment and bonding, are invest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c86c39f49fb25cc4d8e524e925ddc9bc
https://doi.org/10.1016/j.mee.2011.04.047
https://doi.org/10.1016/j.mee.2011.04.047
Publikováno v:
ECS Transactions. 44:727-736
This paper presents the experimental and theoretical investigation of the thermal stress development in the C2W 3D integration with template alignment and the impact of fabrication parameters on the thermal stress. The experimental approach is accomp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c2433bbb6f3e2c298fa092b97c4db58
https://doi.org/10.1149/1.3694391
https://doi.org/10.1149/1.3694391