Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Dingxun Fan"'
Autor:
Felix Münning, Oliver Breunig, Henry F. Legg, Stefan Roitsch, Dingxun Fan, Matthias Rößler, Achim Rosch, Yoichi Ando
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-6 (2021)
In topological insulator nanowires quantized Dirac sub-bands are expected, but direct evidence is still missing. Here, the authors report signatures of sub-bands in the gate-voltage dependence of the resistance by tuning the chemical potential in (Bi
Externí odkaz:
https://doaj.org/article/6df0e9a05e1e497b8d103da5a45a1b9f
Autor:
Matthias Rößler, Dingxun Fan, Felix Münning, Henry F. Legg, Andrea Bliesener, Gertjan Lippertz, Anjana Uday, Roozbeh Yazdanpanah, Junya Feng, Alexey Taskin, Yoichi Ando
Publikováno v:
Nano Letters. 23:2846-2853
In a nanowire (NW) of a three-dimensional topological insulator (TI), the quantum-confinement of topological surface states leads to a peculiar subband structure that is useful for generating Majorana bound states. Top-down fabrication of TINWs from
Autor:
Henry F. Legg, Dingxun Fan, Stefan Roitsch, Matthias Rößler, Yoichi Ando, Felix Münning, Achim Rosch, Oliver Breunig
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-6 (2021)
Nature Communications
Nature Communications
The non-trivial topology of the three-dimensional (3D) topological insulator (TI) dictates the appearance of gapless Dirac surface states. Intriguingly, when a 3D TI is made into a nanowire, a gap opens at the Dirac point due to the quantum confineme
Autor:
Henry F. Legg, Matthias Rößler, Felix Münning, Dingxun Fan, Oliver Breunig, Andrea Bliesener, Gertjan Lippertz, Anjana Uday, A. A. Taskin, Daniel Loss, Jelena Klinovaja, Yoichi Ando
Publikováno v:
Nature Nanotechnology
Wireless technology relies on the conversion of alternating electromagnetic fields to direct currents, a process known as rectification. While rectifiers are normally based on semiconductor diodes, quantum mechanical non-reciprocal transport effects
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aec68c97324200b93cda57a67814f4a2
https://edoc.unibas.ch/92113/
https://edoc.unibas.ch/92113/
Autor:
Libin Wang, Hui-Ming Cheng, Wencai Ren, Dingxun Fan, Shuang Song, Ning Kang, Xiuliang Ma, Chuan Xu, Long Chen, Zhibo Liu
Publikováno v:
ACS Nano. 11:5906-5914
Vertical heterostructures of two-dimensional (2D) crystals have led to the observations of numerous exciting physical phenomena and presented the possibilities for technological applications, which strongly depend on the quality, interface, relative
Autor:
Sen Li, Feifan Su, Hongqi Xu, Dingxun Fan, Jianhua Zhao, Shi-Ping Zhao, Jinhua Zhi, Dong Pan, Ning Kang
Publikováno v:
Physical Review B. 99
Hybrid superconducting devices based on high-mobility two-dimensional electron gases with strong spin-orbit coupling are considered to offer a flexible and scalable platform for topological quantum computation. Here, we report the realization and ele
Autor:
Cheng Wang, Sen Li, Ning Kang, Jianhua Zhao, Jing-Kun Guo, Dong Pan, Hongqi Xu, Dingxun Fan, Jinhua Zhi
Publikováno v:
Nano letters. 19(1)
Low-dimensional narrow band gap III-V compound semiconductors, such as InAs and InSb, have attracted much attention as one of promising platforms for studying Majorana zero modes and non-Abelian statistics relevant for topological quantum computation
Autor:
Chuan, Xu, Shuang, Song, Zhibo, Liu, Long, Chen, Libin, Wang, Dingxun, Fan, Ning, Kang, Xiuliang, Ma, Hui-Ming, Cheng, Wencai, Ren
Publikováno v:
ACS nano. 11(6)
Vertical heterostructures of two-dimensional (2D) crystals have led to the observations of numerous exciting physical phenomena and presented the possibilities for technological applications, which strongly depend on the quality, interface, relative
Autor:
Hongqi Xu, Jianhua Zhao, Sen Li, Dong Pan, Dingxun Fan, Ning Kang, Jinhua Zhi, Feifan Su, Shiping Zhao
Publikováno v:
physica status solidi (b). 256:1800538
Understanding of the electrical contact properties of semiconductor nanowire (NW) field effect transistors (FETs) plays a crucial role in employing semiconducting NWs as building blocks for future nanoelectronic devices and in the study of fundamenta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::639e01c49bdf850d3be213d49bf789ee
http://arxiv.org/abs/1605.08689
http://arxiv.org/abs/1605.08689