Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Dingkun Ma"'
Autor:
Xianggang Hu, Jiancang Su, Mingtao Zhang, Xi Li, Dingkun Ma, Jingang Gong, Kewei Cheng, Jia Liu, Jiande Zhang, Rui Li, Jie Cheng, Shaotong Wu
Publikováno v:
International Journal of Antennas and Propagation, Vol 2024 (2024)
The equivalent isotropic radiated power (EIRP) of high-power microwave (HPM) systems is a core-evaluating indicator. In practical testing, locating a suitable test site for the far-field method becomes challenging due to the requisite antenna separat
Externí odkaz:
https://doaj.org/article/a8fe445e5a75494db60b801945e4f2a6
Autor:
Dingkun Ma, Hao Li, Ruixue Wu, Yinan Li, Rongchuan Lü, Yan Ma, Yi Ding, Xiaojiao Yang, Tong Jiang, Xumin Yu
Publikováno v:
Frontiers in Physics, Vol 11 (2023)
Interference has recently become a critical factor in communication satellite performance, and the interference source location is one of the most important factors in resolving this issue. The article proposes an innovative method of interference so
Externí odkaz:
https://doaj.org/article/ccb5574bb3724aff983baf61a6482581
Autor:
Dingkun Ma, Guochun Xiao, Tongyu Zhang, Fengtao Yang, Mengyu Zhu, Tianshu Yuan, Liangjun Ma, Yongmei Gan, Laili Wang
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 11:1722-1736
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::beb459c5589b11832a0b17dab2037023
https://doi.org/10.1109/jestpe.2022.3210440
https://doi.org/10.1109/jestpe.2022.3210440
Publikováno v:
IEEE Transactions on Power Electronics. 37:7952-7964
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d9015a877480683518a298df13014a7
https://doi.org/10.1109/tpel.2022.3141373
https://doi.org/10.1109/tpel.2022.3141373
Publikováno v:
2023 IEEE Applied Power Electronics Conference and Exposition (APEC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ef9cb10c2f27f6f01b2b05f78a3ee5b
https://doi.org/10.1109/apec43580.2023.10131297
https://doi.org/10.1109/apec43580.2023.10131297
Autor:
Mengjie Qin, Fengtao Yang, Fan Zhang, Laili Wang, Dingkun Ma, Wei Mu, Jianpeng Wang, Jinjun Liu, Binyu Wang
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 9:3992-4003
Insulated gate bipolar transistor (IGBT) modules are the most critical components of modular multilevel converters (MMCs). However, they are subjected to repetitive thermo-mechanical stress caused by thermal cycles on different materials, which can e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f59a1bf2cfe6132c92de6827de798d4
https://doi.org/10.1109/jestpe.2021.3054918
https://doi.org/10.1109/jestpe.2021.3054918
Autor:
Cheng Zhao, Yan Li, Dingkun Ma, Wenjie Chen, Binyu Wang, Jianpeng Wang, Fengtao Yang, Laili Wang
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 9:3959-3970
Junction temperature is a key parameter for the safe operation of power semiconductor devices in power electronic systems. However, it is difficult to forecast the accurate thermal stress of the device in field use. Consequently, engineers tend to us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19a2694e6f27f3a6e18abce39dd4c42f
https://doi.org/10.1109/jestpe.2020.3021679
https://doi.org/10.1109/jestpe.2020.3021679
Publikováno v:
2021 IEEE Energy Conversion Congress and Exposition (ECCE).
Wide-bandgap (WBG) semiconductors devices such as silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) can handle much higher voltage and current in a relatively small die size than their Si counterpart. However, the shrin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c413c5f633a5366a81b94360147d7c7
https://doi.org/10.1109/ecce47101.2021.9595649
https://doi.org/10.1109/ecce47101.2021.9595649
Publikováno v:
2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbf75c0b9c46e433d81bdf7c06298518
https://doi.org/10.1109/wipdaasia51810.2021.9656056
https://doi.org/10.1109/wipdaasia51810.2021.9656056
Publikováno v:
2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).
Press-pack IGBTs are now widely used in HVDC and FACTS since its extraordinary reliability and high power density. A method to estimate the reliability of press-pack IGBT based on FEM is proposed. A circuit model of MMC was simulated by Simplorer in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d13a20c63237e823d4c4b780b29952ae
https://doi.org/10.1109/sslchinaifws51786.2020.9308685
https://doi.org/10.1109/sslchinaifws51786.2020.9308685