Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Dingjiang Yang"'
Autor:
Zhixiong Feng, Lu Miao, Guangcai Feng, Yuedong Wang, Zhiqiang Xiong, Shuran Luo, Dingjiang Yang
Publikováno v:
Engineering Geology. 279:105880
The Baige landslide in southwest China has been active for at least 50 years, and experienced two failure events on Oct. 10 and Nov. 3, 2018. The rock mass and debris of the slope failure formed a landslide dam. The discharge of the dammed lake plus
This book introduces the basic framework of advanced focal plane technology based on the third-generation infrared focal plane concept. The essential concept, research advances, and future trends in advanced sensor arrays are comprehensively reviewed
Publikováno v:
Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN ISBN: 9783662527160
An infrared focal plane array (IRFPA) is an advanced imaging sensor with the ability to detect, acquire, and process infrared information. Generally, an IRFPA is composed of a photodiode array and specific readout integrated circuits.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebf1327b66cba7ecbb3dedc284a98bb0
https://doi.org/10.1007/978-3-662-52718-4_7
https://doi.org/10.1007/978-3-662-52718-4_7
Publikováno v:
Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN ISBN: 9783662527160
HgCdTe infrared detectors have been available for half a century. Many physical models of HgCdTe infrared detectors, which are based on the basic principles of semiconductor physics, have been developed. These models have been widely used in the desi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6f21ef460f03106fad5885f37491286
https://doi.org/10.1007/978-3-662-52718-4_2
https://doi.org/10.1007/978-3-662-52718-4_2
Publikováno v:
Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN ISBN: 9783662527160
During the development of semiconductor science and technology, Si and Ge were the first-generation semiconductor material, while GaAs, InP are known as the second-generation semiconductor material. In recent years, rapid developments have occurred i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f99164767b552a2fe428528d3a4bc28
https://doi.org/10.1007/978-3-662-52718-4_4
https://doi.org/10.1007/978-3-662-52718-4_4
Publikováno v:
Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN ISBN: 9783662527160
Advanced HgCdTe infrared focal plane array (IRFPA) technology extends the ability of optoelectronic detection from single-band two-dimensional target imaging to multiple spectral three-dimensional imaging. It is developing continuously toward the dir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4cf79389629a32a9233a10f75adcac7
https://doi.org/10.1007/978-3-662-52718-4_3
https://doi.org/10.1007/978-3-662-52718-4_3
Publikováno v:
Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN ISBN: 9783662527160
After infrared and laser detection techniques were developed, ultraviolet detection techniques become another important photoelectric detection tool used in both military and civilian fields. As a complement of infrared technique, the ultraviolet det
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5c70c7cc2a1f154d86d447eb7f8899f
https://doi.org/10.1007/978-3-662-52718-4_6
https://doi.org/10.1007/978-3-662-52718-4_6
Publikováno v:
Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN ISBN: 9783662527160
As a pseudobinary system material with the characteristics of adjustable band gap, high optical absorption coefficient, long carrier lifetime, high electron mobility, etc. (Proceedings of SPIE, V7388:P73880J-1, 2009), HgCdTe has always been the prefe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::293f4586ba4568348811fa1ac19e70b7
https://doi.org/10.1007/978-3-662-52718-4_5
https://doi.org/10.1007/978-3-662-52718-4_5
Publikováno v:
Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN ISBN: 9783662527160
Infrared (IR) detector technology has attracted attention since IR light was identified by Sir Frederick William Herschel more than 200 years ago.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e4ee07fa2d2a2c81926f1842f8bf875
https://doi.org/10.1007/978-3-662-52718-4_1
https://doi.org/10.1007/978-3-662-52718-4_1