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Autor:
Xiqi Feng, Guanqin Hu, Ding-Yuan Fan, S. Kapphan, Ying-Peng Huang, Zhi-Wen Yin, Yi Yang, Fuzheng Zhou, Christopher R. Fisher
Publikováno v:
Materials Science and Engineering: B. 23:83-87
A series of Nd-doped Bi4Ge3O12 (Nd:BGO) crystals have been grown with an improved Bridgman-Stockbarger method; the mechanism of formation of different kinds of defects introduced during growth was studied, and the methods for removing these defects w