Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Ding-Hua Bao"'
Autor:
Jian-Hua Jia, Ming-Liang Tong, Yan-Cong Chen, Ji-Dong Leng, Peng-Hu Guo, Quan-Wen Li, Bao-Ying Wang, Yan Meng, Ding-Hua Bao
Publikováno v:
J. Mater. Chem. C. 2:8858-8864
A novel multifunctional complex [Dy4(OH)2(bpt)4(NO3)6(EtOH)2]·EtOH (1, Hbpt = 3,5-bis(pyridin-2-yl)-1,2,4-trizolate) was designed, based on the self-assembly under hydrothermal conditions, and it displays properties of single-molecule magnets (SMMs)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c30c2df7695fc7cfc796715a975e863
https://doi.org/10.1039/c4tc01275e
https://doi.org/10.1039/c4tc01275e
Publikováno v:
Advanced Materials. 24:132-136
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22b6b30ec571aea3adb780fa00d0572b
https://doi.org/10.1002/adma.201103530
https://doi.org/10.1002/adma.201103530
Autor:
Ann-Kuo Chu, Simon M. Sze, Jin-Cheng Zheng, Yu-Ting Chen, Jyun-Bao Yang, Ting-Chang Chang, Jheng-Jie Huang, Hsueh-Chih Tseng, Ming-Jinn Tsai, Ding-Hua Bao
Publikováno v:
IEEE Electron Device Letters. 35:909-911
This letter investigates various oxygen concentra- tions in indium oxide films which induce different resistance switching behaviors, including two self-compliance behaviors and a two-step set process. The accumulated oxygen ions produce an oxygen-ri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::679852824c74837d6a636f6efe97897b
https://doi.org/10.1109/led.2014.2336676
https://doi.org/10.1109/led.2014.2336676
Autor:
Chih-Cheng Shih, Simon M. Sze, Jen-Chung Lou, Jung-Hui Chen, Tai-Fa Young, Tian-Jian Chu, Ting-Chang Chang, Tsung-Ming Tsai, Kai-Huang Chen, Hsin-Lu Chen, Syuan-Yong Huang, Ding-Hua Bao, Rui Zhang, Kuan-Chang Chang
Publikováno v:
IEEE Electron Device Letters. 35:633-635
Photosensitivity to ultraviolet (UV) light for zinc oxide (ZnO) resistance random access memory (RRAM) with transparent electrode was investigated and characterized in this paper. The resistive switching properties were affected severely through oxyg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62e20b6debc9ed6e8b70444ba40553d7
https://doi.org/10.1109/led.2014.2316673
https://doi.org/10.1109/led.2014.2316673
Autor:
Min-Chen Chen, Syuan-Yong Huang, Kuan-Chang Chang, Ding-Hua Bao, Simon M. Sze, Tsung-Ming Tsai, Kai-Huang Chen, Tian-Jian Chu, Tai-Fa Young, Zhi-Yang Wang, Yong-En Syu, Jung-Hui Chen, Ting-Chang Chang, Rui Zhang
Publikováno v:
IEEE Electron Device Letters. 35:530-532
In this letter, dual ion effect induced reset process of lithium silicate resistance random access memory (RRAM) devices is studied and discussed. Unlike the traditional silicon oxide-based RRAM, lithium ions also participate in the resistive switchi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34bfbdf31d273a508c595457e4b2d6b1
https://doi.org/10.1109/led.2014.2311295
https://doi.org/10.1109/led.2014.2311295
Publikováno v:
Journal of Magnetism and Magnetic Materials. 321:3406-3410
Thin films of Zn 1− x Mn x O ( x =0.01) diluted magnetic semiconductor were prepared on Si (1 0 0) substrates by the sol–gel method. The influence of annealing temperature on the structural, optical and magnetic properties was studied by X-ray di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e6c249a5b57af57183208d34b623a43
https://doi.org/10.1016/j.jmmm.2009.06.018
https://doi.org/10.1016/j.jmmm.2009.06.018
Publikováno v:
Ferroelectrics Letters Section. 24:123-130
Transparent and crack-free calcium modified lead titanate thin films were prepared on platinum-coated silicon and fused quartz substrates by a sol-gel technique. Lead acetate trihydrate, calcium nitrate tetrahydrate and titanium tetra-n-butoxide were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33f49364f368e2e6addac53a26876c76
https://doi.org/10.1080/07315179808204532
https://doi.org/10.1080/07315179808204532
Autor:
Kuan-Chang Chang, Yin-Chih Pan, Ding-Hua Bao, Jen-Chung Lou, Syuan-Yong Huang, Jen-Wei Huang, Tsung-Ming Tsai, Simon M. Sze, Ting-Chang Chang, Dershin Gan, Kai-Huang Chen, Rui Zhang, Yong-En Syu, Jung-Hui Chen, Hui-Chun Huang, Tai-Fa Young
Publikováno v:
Nanoscale Research Letters
To improve the operation current lowing of the Zr:SiO2 RRAM devices, a space electric field concentrated effect established by the porous SiO2 buffer layer was investigated and found in this study. The resistive switching properties of the low-resist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::468b5d5e56294513d6bed1b1916ad855
https://doi.org/10.1186/1556-276x-8-523
https://doi.org/10.1186/1556-276x-8-523
Autor:
Ji-Dong Leng, Wei-Quan Lin, Yan-Cong Chen, Peng-Hu Guo, Xu-Dong Zhang, Ming-Liang Tong, Junhua Luo, Jian-Hua Jia, Jun-Liang Liu, Ding-Hua Bao, Jing Wang, Fu-Sheng Guo
Publikováno v:
Chemistry (Weinheim an der Bergstrasse, Germany). 19(27)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f87c8feae9564ff4413a3fcb00a2337f
https://pubmed.ncbi.nlm.nih.gov/23712463
https://pubmed.ncbi.nlm.nih.gov/23712463
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 24(1)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::6944d05f59abcc017d864d325c6cbfee
https://pubmed.ncbi.nlm.nih.gov/22135051
https://pubmed.ncbi.nlm.nih.gov/22135051