Zobrazeno 1 - 10
of 890
pro vyhledávání: '"Ding, Fu"'
Autor:
Zhou, Hang, Xiao, Rui-Chun, Zhang, Shu-Hui, Gan, Wei, Han, Hui, Zhao, Hong-Miao, Lu, Wenjian, Zhang, Changjin, Sun, Yuping, Li, Hui, Shao, Ding-Fu
Nonlinear optics plays important roles in the research of fundamental physics and the applications of highperformance optoelectronic devices. The bulk nonlinear optical responses arise from the uniform light absorption in noncentrosymmetric crystals,
Externí odkaz:
http://arxiv.org/abs/2407.08420
Autor:
Bekele, Zelalem Abebe, Jiang, Yuan-Yuan, Lei, Kun, Lan, Xiukai, Liu, Xiangyu, Wen, Hui, Shao, Ding-Fu, Wang, Kaiyou
Spin-orbit torques (SOTs) generated through the conventional spin Hall effect and/or Rashba-Edelstein effect are promising for manipulating magnetization. However, this approach typically exhibits non-deterministic and inefficient behaviour when it c
Externí odkaz:
http://arxiv.org/abs/2404.13405
Autor:
Shao, Ding-Fu, Tsymbal, Evgeny Y.
Publikováno v:
npj Spintronics 2, 13 (2024)
Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics, where an AFM N\'eel vector is used as a state variable. Efficient electric control and detection of the N\'eel vector are critical for spintronic applications. This review
Externí odkaz:
http://arxiv.org/abs/2312.13507
Autor:
Zhang, Shui-Sen, Wang, Zi-An, Li, Bo, Zhang, Shu-Hui, Xiao, Rui-Chun, Liu, Lan-Xin, Luo, X., Lu, W. J., Tian, Mingliang, Sun, Y. P., Tsymbal, Evgeny Y., Du, Haifeng, Shao, Ding-Fu
Magnetically ordered materials reveal various types of magnetic moment alignment that affects their functional properties. This makes the exploration of unconventional magnetic orderings promising for the discovery of new physical phenomena and spint
Externí odkaz:
http://arxiv.org/abs/2310.13271
Magnetic tunnel junctions (MTJs) are key components of spintronic devices, such as magnetic random-access memories. Normally, MTJs consist of two ferromagnetic (FM) electrodes separated by an insulating barrier layer. Their key functional property is
Externí odkaz:
http://arxiv.org/abs/2310.02139
Electronic band structures underlie the physical properties of crystalline materials, their geometrical exploration renovates the conventional cognition and brings about novel applications. Inspired by geometry phases, we introduce a geometric amplit
Externí odkaz:
http://arxiv.org/abs/2309.13901
Autor:
Jiang, Yuan-Yuan, Wang, Zi-An, Samanta, Kartik, Zhang, Shu-Hui, Xiao, Rui-Chun, Lu, W. J., Sun, Y. P., Tsymbal, Evgeny Y., Shao, Ding-Fu
Using first-principles quantum-transport calculations, we investigate spin-dependent electronic and transport properties of antiferromagnetic tunnel junctions (AFMTJs) that consist of (110)-oriented antiferromagnetic (AFM) metal RuO$_{2}$ electrodes
Externí odkaz:
http://arxiv.org/abs/2309.02634
Magnetic skyrmions and antiskyrmions are topologically protected quasiparticles exhibiting a whirling spin texture in real space. Antiskyrmions offer some advantages over skyrmions as they are expected to have higher stability and can be electrically
Externí odkaz:
http://arxiv.org/abs/2307.15769
Valleytronics is a research field utilizing a valley degree of freedom of electrons for information processing and storage. A strong valley polarization is critical for realistic valleytronic applications. Here, we predict a tunneling valley Hall eff
Externí odkaz:
http://arxiv.org/abs/2306.10697
Recent theoretical predictions and experimental demonstrations of a large tunneling magnetoresistance (TMR) effect in antiferromagnetic (AFM) tunnel junctions (AFMTJs) offer a new paradigm for information technologies where the AFM N\`eel vector serv
Externí odkaz:
http://arxiv.org/abs/2306.03026