Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Dinesh Rajasekharan"'
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 41:2107-2114
Ferroelectric field-effect transistor-based circuit implementation mimicking FitzHugh-Nagumo neuron is proposed in this work. The proposed circuit is shown to mimic biological neuron properties such as excitation block and anodal break excitation whi
Publikováno v:
IEEE Embedded Systems Letters. 14:103-106
Autor:
Swetaki Chatterjee, Nikhil Rangarajan, Satwik Patnaik, Dinesh Rajasekharan, Ozgur Sinanoglu, Yogesh Singh Chauhan
Publikováno v:
IEEE Transactions on Emerging Topics in Computing. :1-6
Autor:
Dinesh Rajasekharan, Nikhil Rangarajan, Satwik Patnaik, Ozgur Sinanoglu, Yogesh Singh Chauhan
Publikováno v:
IEEE Transactions on Neural Networks and Learning Systems. :1-15
Deep neural networks (DNNs) form a critical infrastructure supporting various systems, spanning from the iPhone neural engine to imaging satellites and drones. The design of these neural cores is often proprietary or a military secret. Nevertheless,
Publikováno v:
2020 5th IEEE International Conference on Emerging Electronics (ICEE).
Publikováno v:
IEEE Transactions on Nanotechnology. 17:1235-1243
Fully depleted silicon-on-insulator (FDSOI) MOSFET-based inverter is used as a distance computing cell (DCC) for non-Boolean associative processing system. Using back-gate bias in FDSOI transistors, the DCC shows excellent controllability of current
Publikováno v:
VLSI Design
Potential of neuromorphic circuits on FDSOI technology for computer vision applications is demonstrated in this paper. Computer vision systems based on conventional Von Neumann architecture consume large area and energy. The FDSOI inverter-based circ
Publikováno v:
Microelectronics Journal. 104:104877
A novel method for associative processing, using negative capacitance FDSOI (NC-FDSOI) transistors, is presented in this work. Distance computing cell (DCC), that is the basic building block of the associative processing system, is designed using onl
Publikováno v:
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).
Exploiting the Tunnel FET (TFET) properties such as unidirectional conduction and asymmetric drain and source, we propose for the first time a novel TFET-based circuit design mechanism for spike timing dependent plasticity process. In the proposed ci
Publikováno v:
2016 3rd International Conference on Emerging Electronics (ICEE).
Tunnel FETs (TFETs) with steep switching slope have emerged as an attractive device for energy-efficient circuit implementations. In this work, we explore Spiking Neural Network (SNN) based on Tunnel FETs. Neuron and binary image edge detection circu