Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Dinesh Kushwaha"'
Autor:
Dinesh Kushwaha, Ashish Joshi, Chaudhry Indra Kumar, Neha Gupta, Sandeep Miryala, Rajiv V. Joshi, Sudeb Dasgupta, Anand Bulusu
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 69:2311-2315
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::950d316c5473d70eacc25f0125868213
https://doi.org/10.1109/tcsii.2022.3149818
https://doi.org/10.1109/tcsii.2022.3149818
Autor:
Dinesh Kushwaha, Ashish Joshi, Neha Gupta, Aditya Sharma, Sandeep Miryala, Rajiv V. Joshi, S. Dasgupta, Anand Bulusu
Publikováno v:
2023 36th International Conference on VLSI Design and 2023 22nd International Conference on Embedded Systems (VLSID).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2427935a6836cabe6aed37ac14e7ed3a
https://doi.org/10.1109/vlsid57277.2023.00078
https://doi.org/10.1109/vlsid57277.2023.00078
Autor:
Neha Gupta, Ashish Joshi, Dinesh Kushwaha, Vinod Menezes, Rashmi Sachan, Sudeb Dasgupta, Anand Bulusu
Publikováno v:
2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d626d3e992c9df26a868f79c2e035a7e
https://doi.org/10.1109/icecs202256217.2022.9970819
https://doi.org/10.1109/icecs202256217.2022.9970819
Autor:
Dinesh Kushwaha, Aditya Sharma, Neha Gupta, Ritik Raj, Ashish Joshi, Jwalant Mishra, Rajat Kohli, Sandeep Miryala, Rajiv Joshi, Sudeb Dasgupta, Anand Bulusu
Publikováno v:
2022 IEEE International Symposium on Circuits and Systems (ISCAS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e84f6b06e4d5b506278c2bb1a0b1f080
https://doi.org/10.1109/iscas48785.2022.9937908
https://doi.org/10.1109/iscas48785.2022.9937908
Autor:
D. K. Mishra, Dinesh Kushwaha
Publikováno v:
Circulation in Computer Science. 2:1-4
This paper proposes a low voltage CMOS Nano power current reference circuit and presents its performance with circuit simulation in 180- nm UMC CMOS technology. The proposed circuit consists of start-up, Bias-voltage, current-source sub-circuits with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::404bcc27414c56b4b82208cab7b4ec9d
https://doi.org/10.22632/ccs-2016-251-36
https://doi.org/10.22632/ccs-2016-251-36
Autor:
D. K., Dinesh Kushwaha
Publikováno v:
Communications on Applied Electronics. 6:10-13
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::718c35c25dafccf2d0cee7a403545909
https://doi.org/10.5120/cae2016652442
https://doi.org/10.5120/cae2016652442
Autor:
Dinesh Kushwaha, D. K. Mishra
Publikováno v:
International Journal of Computer Applications. 148:26-29
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35ba4dc1011e9db4a7b5223a3842c64a
https://doi.org/10.5120/ijca2016911296
https://doi.org/10.5120/ijca2016911296
Autor:
D. K. Mishra, Dinesh Kushwaha
Publikováno v:
2017 14th IEEE India Council International Conference (INDICON).
This work depends on the principle of temperature compensation of threshold voltage of MOS transistor. It generates constant voltage 509mV with supply voltage range 0.7V - 1.8V. It is implemented at 180nm in cadence EDA tool. The device has MOS trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e94a2ecd4cf14a852f96429a0b20611e
https://doi.org/10.1109/indicon.2017.8487579
https://doi.org/10.1109/indicon.2017.8487579
Autor:
D. K. Mishra, Dinesh Kushwaha
Publikováno v:
2017 International Conference on Information, Communication, Instrumentation and Control (ICICIC).
A Nano power CMOS voltage generator circuit has been implemented using a 0.18μm standard CMOS process technology. The circuit has MOSFETs operated in sub threshold region without resistor. It works on the concept of temperature compensation of thres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::183666255e8385d14739d002be584912
https://doi.org/10.1109/icomicon.2017.8279113
https://doi.org/10.1109/icomicon.2017.8279113
Autor:
Dinesh Kushwaha, D. K. Mishra
Publikováno v:
ICIIS
This work depends on the principle of temperature compensation of threshold voltage of MOS transistor. It generates constant voltage 333mV with supply voltage range 0.8 V–1.3V. It is implemented at 180nm in cadence EDA tool. The device has MOS tran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c748b2a3fba8a4df9de5719c6cca786
https://doi.org/10.1109/iciinfs.2016.8262924
https://doi.org/10.1109/iciinfs.2016.8262924