Výsledky vyhledávání - "Dina H. Triyoso"

The Impacts of Ferroelectric and Interfacial Layer Thicknesses on Ferroelectric FET Design

Autor: Robert D. Clark, Jae Hur, Steven Consiglio, Zheng Wang, Asif Islam Khan, K. Tapily, Shimeng Yu, Muhammad Mainul Islam, Nujhat Tasneem, Winston Chern, Hang Chen, Gert J. Leusink, Dina H. Triyoso

Publikováno v: IEEE Electron Device Letters. 42:1156-1159

Despite tremendous interests in ferroelectric field-effect transistors (FEFETs) for embedded, data-centric applications, the fundamental trade-offs between memory window (MW) and write voltage to optimize performance remains poorly understood. To tha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6c5bf73d69b54be8ba3148abd924e622
https://doi.org/10.1109/led.2021.3088388

Zobrazit plný text záznamu

Process Dependent Optimization of Dielectric and Metal Stacks for Multilevel Resistive Random-Access Memory

Autor: Gert J. Leusink, Vidya Kaushik, Kandabara Tapily, Steven Consiglio, Durga Misra, Robert D. Clark, Pengxiang Zhao, Cory Wajda, Dina H. Triyoso

Publikováno v: ECS Transactions. 97:13-20

Recently, multilevel Resistive RAM (ReRAM) stacks have been demonstrated to have promising applications related to inference and learning in artificial intelligence. However, extensive studies on energy efficiency, repeatability, and retention during

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ad79389874efd89b7c63734e6714f10e
https://doi.org/10.1149/09703.0013ecst

Zobrazit plný text záznamu

Process Optimization to Reduce Power in HfO2-Based Rram Devices for in-Memory Computing

Autor: Aseel Zeinati, Durga Misra, Dina H. Triyoso, Robert Clark, Kandabara Tapily, Steven Consiglio, Cory S Wajda, Gert J Leusink

Publikováno v: ECS Meeting Abstracts. :806-806

Recently, HfO2-based resistive random-access memory (RRAM) devices have shown promise as candidates for in-memory computing applications. By engineering the distribution of defects or oxygen vacancies, the switching dielectric can potentially enable

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6960de0efea73af03512b2cfaa46d9d1
https://doi.org/10.1149/ma2022-0215806mtgabs

Zobrazit plný text záznamu

Ferroelectric and Antiferroelectric Hf/Zr oxide films: past, present and future

Autor: Dina H. Triyoso, K. Tapily, Gert J. Leusink, C. Mart, Steven Consiglio, Wenke Weinreich, C. S. Wajda, Robert D. Clark, Alain C. Diebold, Thomas Kampfe, Vineetha Mukundan

Publikováno v: 2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).

Ferroelectric and antiferroelectric Hf/Zr-based oxide films have recently gained interest for memory and AI applications due to their promise of low power and CMOS compatibility. As Hf/Zr-based oxides are not ‘new’ materials, this paper will star

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::622c5d683d95e1dfe9f675728d03d2da
https://doi.org/10.1109/vlsi-tsa51926.2021.9440135

Zobrazit plný text záznamu

Plasma-induced roughness and chemical modifications of TiN bottom electrode and their impact on HfO2-MIM properties

Autor: Kathleen Dunn, Gert J. Leusink, Amber Palka, Angelique Raley, Dina H. Triyoso, Sophia Rogalskyj, Hunter Frost, Robert D. Clark, Cory Wajda, Nicholas Joy

Publikováno v: 2020 IEEE International Interconnect Technology Conference (IITC).

Metal-insulator-metal (MIM) stacks, though simple in design, are the backbone device for resistive random access memories (ReRAM) and, as such, play a vital role in emerging memory technologies. In this work, we characterize the impact of Ar, Ar/N2,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e532ace427d50b888579c5944e308463
https://doi.org/10.1109/iitc47697.2020.9515603

Zobrazit plný text záznamu

Atomic-Scale Imaging of Polarization Switching in an (Anti-)Ferroelectric Memory Material: Zirconia (ZrO2)

Autor: K. Tapily, Robert D. Clark, Zheng Wang, Sebastian E. Reyes-Lillo, Kisung Chae, Steven Consiglio, Dina H. Triyoso, Gerrit J. Leusink, Kyeongjae Cho, Josh Kacher, Michael J. Hoffmann, Andrew C. Kummel, Asif Islam Khan, S. F. Lombardo, C.W. Nelson, Mengkun Tian, Nujhat Tasneem

Publikováno v: 2020 IEEE Symposium on VLSI Technology.

Direct, atomic-scale visualization of polarization switching in a functional, polycrystalline, binary oxide via insitu high-resolution transmission electron microscopy (HRTEM) biasing is reported for the first time. Antiferroelectric (AFE) ZrO 2 was

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4c9e65bf322fd09e97a6858b733db9d6
https://doi.org/10.1109/vlsitechnology18217.2020.9265091

Zobrazit plný text záznamu

Material Innovation in the Era of Artificial Intelligence - A Case Study of Hf-Zr Systems

Autor: Hisashi Higuchi, Christopher Cole, Dina H. Triyoso, Cory Wajda, Sophia Rogalskyj, Gert J. Leusink, Angelique Raley, Steven Consiglio, Danny Newman, Robert D. Clark, Kandabara Tapily, Takahiro Hakamata

Publikováno v: 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

In this work, we presented the Hf-Zr system as a case study of materials that were evaluated in the past and are now receiving renewed interest due to its potential use in artificial intelligence (AI). A historical overview of Hf-Zr research and its

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::26f8a9a18e72a2ded18f9a9f224c8bab
https://doi.org/10.1109/edtm47692.2020.9117861

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání