Zobrazeno 1 - 10
of 147
pro vyhledávání: '"Dimitris E. Ioannou"'
Autor:
Jafetra Rambeloson, Dimitris E. Ioannou, Parameswari Raju, Xiao Wang, Abhishek Motayed, Hyeong Jin Yun, Qiliang Li
Publikováno v:
Chemosensors, Vol 10, Iss 10, p 405 (2022)
Photoactivated gallium nitride (GaN) nanowire-based gas sensors, functionalized with either bare In2O3 or In2O3 coated with a nanolayer of evaporated Au (Au/In2O3), were designed and fabricated for high-sensitivity sensing of NO2 and low-power operat
Externí odkaz:
https://doaj.org/article/5dd3c0f90d9e425c8d1568718d885cd0
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 6, Pp 468-471 (2015)
With the help of numerical simulations, we revisit the operation of dynamic thin-capacitively-coupled-thyristor RAM (TRAM) and field effect diode-RAM cells and clarify the memory mechanism. The resulting carrier profiles demonstrate that the recently
Externí odkaz:
https://doaj.org/article/86c15d242d344a68aad519e1e653b1b5
Autor:
Yafen Yang, Kai Zhang, Yi Gu, Parameswari Raju, Qiliang Li, Li Ji, Lin Chen, Dimitris E. Ioannou, Qingqing Sun, David Wei Zhang, Hao Zhu
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Publikováno v:
ECS Meeting Abstracts. :1324-1324
We report and discuss our results on the performance of our photoactivated In3O2/GaN NW sensors, for monitoring NO2 at various levels of relative humidity and operating power. A 1ppm sensitivity as high as 29% was demonstrated at operating power of 5
Autor:
Asahiko Matsuda, Mhamed Lahbabi, Jason P. Campbell, Jason T. Ryan, Kin P. Cheung, Jaafar Chbili, Dimitris E. Ioannou, Z. Chbili
Publikováno v:
IEEE Transactions on Electron Devices. 63:3605-3613
One of the most serious technology roadblocks for SiC DMOSFETs is the significant occurrence of early failures in time-dependent-dielectric-breakdown testing. Conventional screening methods have proved ineffective, because the remaining population is
Autor:
Jaafar Chbili, Kin P. Cheung, Jason P. Campbell, Z. Chbili, Dimitris E. Ioannou, Kevin Matocha, Mhamed Lahbabi
Publikováno v:
Materials Science Forum. 858:615-618
In this paper we report TDDB results on SiO2/SiC MOS capacitors fabricated in a matured production environment. A key feature is the absence of early failure out of over 600 capacitors tested. The observed field accelerations and activation energies
Publikováno v:
2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
The self-heating effect (SHE) is a growing problem for decananometer CMOS and beyond with substantial efforts dedicated to mitigation. Here, we present a new memory concept which instead requires SHE exacerbation. As such, this memory concept is natu
Publikováno v:
Proceedings IMCS 2018.
Autor:
Kin P. Cheung, Dmitry Veksler, Pragya R. Shrestha, Vasileia Georgiou, Jason P. Campbell, Jason T. Ryan, Dimitris E. Ioannou
There is an increasing number of reports on polar polymer-based Ferroelectric Field Effect Transistors (FeFETs), where the hysteresis of the drain current – gate voltage (I(d)-V(g)) curve is investigated as the result of the ferroelectric polarizat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a95e6437cc1092abca2c0c1726ebd382
https://europepmc.org/articles/PMC6508614/
https://europepmc.org/articles/PMC6508614/
Publikováno v:
IEEE Transactions on Electron Devices. 62:2865-2870
A static memory cell (SRAM) based on the field-effect diode (FED) is presented, and its operation is explained with the help of numerical device simulations. Although this new cell resembles the thin-capacitively coupled-thyristor (TCCT) SRAM cell in