Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Dimitrios Tsamados"'
Publikováno v:
Optical Microlithography XXXIII.
The consideration of wafer topography effects in lithographic modeling of implant layers is mandatory for sub 32nm processes. The approximate assumption that both oxide- and resist thickness are independent of pattern design can lead to large model p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37eb97317b54c1729a83c4634d989cdd
https://doi.org/10.1117/12.2552102
https://doi.org/10.1117/12.2552102
Autor:
Adrian M. Ionescu, Juergen Brugger, Nenad V. Cvetkovic, Dimitrios Tsamados, Katrin Sidler, Veronica Savu
Publikováno v:
Microelectronic Engineering. 98:508-511
Graphical abstractDisplay Omitted Highlights? Stencils are used to fabricate pentacene thin film transistors on polyimide. ? Transistors are stretched to maximum 2.6% strain up to 28,000 times. ? Results reveal that first stretching cycle affects the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::37ba6aca23616b1c55d5bab9a35ef60c
https://doi.org/10.1016/j.mee.2012.07.080
https://doi.org/10.1016/j.mee.2012.07.080
Autor:
Veronica Savu, Dimitrios Tsamados, Adrian M. Ionescu, Katrin Sidler, Jyotshna Bhandari, Juergen Brugger, Nenad V. Cvetkovic
Publikováno v:
Solid-State Electronics. 54:1003-1009
In this work double-gate pentacene TFT architecture is proposed and experimentally investigated. The devices are fabricated on a polyimide substrate based on a process that combines three levels of stencil lithography with standard photolithography.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b3dca16b38fbc039bcb437f28eb5cf88
https://doi.org/10.1016/j.sse.2010.04.019
https://doi.org/10.1016/j.sse.2010.04.019
Autor:
Juergen Brugger, Nenad V. Cvetkovic, Dimitrios Tsamados, Adrian M. Ionescu, Katrin Sidler, Veronica Savu
Publikováno v:
Sensors and Actuators A: Physical. 162:155-159
This paper presents new results on miniaturized organic thin film transistors (TFT) fabricated on a spin coated polyimide (PI) film. Patterning steps, that are vital for the integrity and electrical performances of the organic TFT, were performed usi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::883fbc1f583b60a3600a20bbf8fb8b23
https://doi.org/10.1016/j.sna.2010.04.016
https://doi.org/10.1016/j.sna.2010.04.016
Autor:
D. Acquaviva, Adrian M. Ionescu, Thomas Skotnicki, Dimitrios Tsamados, Philippe Coronel, Didier Bouvet
Publikováno v:
Microelectronic Engineering. 86:1074-1077
The design, fabrication and characterization of Micro-electro-mechanical metal-air-insulator-semiconductor (MEM-MAIS) diode switch are originally reported. An abrupt switching from off-state to Fowler-Nordheim tunneling current in on-state is induced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccad94e09020f1db7cdaaa943761508f
https://doi.org/10.1016/j.mee.2009.02.007
https://doi.org/10.1016/j.mee.2009.02.007
Autor:
Christoph Eggimann, K. Akarvardar, Adrian M. Ionescu, Dimitrios Tsamados, Yogesh Singh Chauhan, H.-S. Philip Wong
Publikováno v:
Solid-State Electronics. 52:1374-1381
This paper proposes, the investigation of the Suspended Gate Field-Effect Transistor (SG-FET) small-slope switch based on a hybrid numerical simulation approach combining ANSYSTM Multiphysics and ISE-DESSISTM in a self-consistent system. The proposed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75e3c5510abb084985288fd0bc49e26e
https://doi.org/10.1016/j.sse.2008.04.013
https://doi.org/10.1016/j.sse.2008.04.013
Autor:
Christoph Eggimann, Dimitrios Tsamados, G.C. Wan, Hon-Sum Philip Wong, Adrian M. Ionescu, Y. Singh Chauhan, Roger T. Howe, K. Akarvardar
Publikováno v:
IEEE Transactions on Electron Devices. 55:48-59
An analytical model for the suspended-gate field-effect transistor (SGFET), dedicated to the dc analysis of SGFET logic circuits, is developed. The model is based on the depletion approximation and expresses the pull-in voltage, the pull-out voltage,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83bcc09b0f5fc986ee73f16168b5aee2
https://doi.org/10.1109/ted.2007.911070
https://doi.org/10.1109/ted.2007.911070
Publikováno v:
Microelectronic Engineering. 97:166-168
We present the successful fabrication of horizontally grown and dense carbon nanotube (CNT) membranes in situ. A TiN/Al2O3/TiN stack is first patterned to be employed as a support for the CNT growth. Iron is then evaporated with a 45 degrees tilt ang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::65cccdacf2936071e44e3c6fa28fd134
https://doi.org/10.1016/j.mee.2012.05.017
https://doi.org/10.1016/j.mee.2012.05.017
Publikováno v:
2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Modern CMOS and memory devices feature fins, which are high aspect ratio elements. While narrow and tall fins enhance electrical characteristics, they are mechanically weak structures. Unexpected failure mechanisms, such as fin bending and even crack
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b932d4ae48f2cf66171f9b36f958085
https://doi.org/10.1109/sispad.2013.6650586
https://doi.org/10.1109/sispad.2013.6650586
Autor:
Vladimir Cherman, Sebastian T. Bartsch, Hiroshi Mizuta, Silvia Armini, Faezeh Arab Hassani, Cecilia Dupre, Mohammad Adel Ghiass, Eric Ollier, Dimitrios Tsamados, Yoshishige Tsuchiya
Publikováno v:
2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO).
A double-gate suspended silicon nanowire transistor (DGSSiNWT) is proposed for conduction-based chemical/biological sensing applications. The doping profile is uniform across the device without any junction. The suspended silicon nanowire (SiNW) prov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8781ee9ee29fca781acb61ef38be80f5
https://doi.org/10.1109/nano.2012.6322216
https://doi.org/10.1109/nano.2012.6322216