Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Dimitri R. Kioussis"'
Autor:
Hans Mertens, Dimitri R. Kioussis, M. Kim, S. C. Chen, J. Devrajan, S. A. Chew, Nam-Sung Kim, V. Peña, Hugo Bender, A. Dangol, Gaetano Santoro, Kathy Barla, K. Kenis, P. Lagrain, r. Chiarella, Naomi Yoshida, Mikhail Korolik, Eugenio Dentoni Litta, J. Machillot, Andreas Schulze, Alessio Spessot, D. Yakimets, Steven Demuynck, K-.H. Bu, Geert Eneman, M. Cogorno, Katia Devriendt, Dan Mocuta, Romain Ritzenthaler, Naoto Horiguchi, Doyoung Jang, Shiyu Sun
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
We report on CMOS-integrated vertically stacked gate-all-around (GAA) Si nanowire (NW) MOSFETs with in-situ doped source-drain stressors and dual work function metal gates. We demonstrate that oxidation-induced SiGe/Si fin deformation by STI densific
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b229d35a192bad11c615ee2b40ec51d
https://doi.org/10.1109/iedm.2017.8268511
https://doi.org/10.1109/iedm.2017.8268511
Autor:
Mark C. H. Lamorey, Timothy H. Daubenspeck, R. Bisson, Thomas A. Wassick, K. Smith, Hosadurga Shobha, Dimitri R. Kioussis, Griselda Bonilla, J. Wright, S. Tetreault, David B. Stone, I. Paquin, Timothy M. Shaw, E. Misra, Gordon C. Osborne, Brian R. Sundlof, X.-H. Liu, Christopher D. Muzzy, S. S. Bouchard, David L. Questad
Publikováno v:
2016 IEEE International Reliability Physics Symposium (IRPS).
This study examines different approaches to determining the chip failure rate that occurs due to dielectric cracking under C4 sites during chip joining. We show that testing of the strength of individual C4s by a single bump shear technique gives a s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c59fd5d443a680f84c688a94884e6d01
https://doi.org/10.1109/irps.2016.7574564
https://doi.org/10.1109/irps.2016.7574564
Evaluation of Barrier CMP Slurries and Characterization of ULK Material Properties Shifts Due to CMP
Autor:
Hyunki Kim, Feng Zhao, Moosung Chae, Edward Engbrecht, David Watts, Eden Zielinski, Steve Molis, Mark Chace, Shravanthi L. Manikonda, Wei-Tsu Tseng, Jihong Choi, Connie Truong, Nancy Klymko, Laertis Economikos, Dimitri R. Kioussis
Publikováno v:
ECS Transactions. 13:293-306
The integration of porous ultra low-k (ULK) films, with k = 2.2, into future technology nodes can add risk to yield and reliability. The porosity of the film makes it more susceptible to damage from CMP process. This work investigates the shifts in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c9bf820dfeb34d2d8e7413d98989035
https://doi.org/10.1149/1.2908643
https://doi.org/10.1149/1.2908643
Autor:
Timothy H. Daubenspeck, Timothy M. Shaw, X.-H. Liu, Christopher D. Muzzy, Griselda Bonilla, S. S. Bouchard, Thomas A. Wassick, David B. Stone, David L. Questad, Brian R. Sundlof, Hosadurga Shobha, Dimitri R. Kioussis, I. Paquin, E. Misra, Gordon C. Osborne, J. Wright, S. Tetreault, R. Bisson, Mark C. H. Lamorey
Publikováno v:
2015 IEEE International Integrated Reliability Workshop (IIRW).
The paper examines the factors that affect the formation of delaminations under C4 joints during chip joining. Through multiscale finite element modeling and chip joining experiments we find that two important parameters determining the susceptibilit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5846e5f0ad5af07268a9f4638d1bec1e
https://doi.org/10.1109/iirw.2015.7437081
https://doi.org/10.1109/iirw.2015.7437081
Autor:
Dimitri R. Kioussis, Peter Kofinas
Publikováno v:
Polymer. 46:10167-10172
This work reports on morphological features of hydrogels, which have been used for the ultimate removal and recovery of nutrient and toxic anions from wastewater effluents. The sorbent used was crosslinked polyamine (PAA$HCl) polymeric hydrogels. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c57ae84a0581cea402010aa6e838d79
https://doi.org/10.1016/j.polymer.2005.07.084
https://doi.org/10.1016/j.polymer.2005.07.084
Autor:
Dimitri R. Kioussis, Peter Kofinas
Publikováno v:
Polymer. 46:9342-9347
Ion exchange systems for the removal of nutrient pollutants, even at extremely low concentrations, from wastewater effluents are a major environmental need. This work reports on the features of batch sorption processes for the ultimate removal and re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d187fc2dd8726107ca742594591d4b1c
https://doi.org/10.1016/j.polymer.2005.07.045
https://doi.org/10.1016/j.polymer.2005.07.045
Publikováno v:
Journal of Applied Polymer Science. 80:2073-2083
Systems that are capable of removing highly toxic anions from wastewater effluents, even at extremely low concentrations, are a major need in the defense industry. This study reports on the features of two new batch and continuous-flow sorption proce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b24b26dc7ec1dabd88b5770c553a4ba2
https://doi.org/10.1002/app.1307
https://doi.org/10.1002/app.1307
Publikováno v:
Aquacultural Engineering. 23:315-332
We have developed poly(allyl amine hydrochloride) (PAA · HCl) polymer hydrogels, that efficiently remove nitrate (NO 3 − ), nitrite (NO 2 − ), and orthophosphate (PO 4 3− ) nutrient anions from the aquaculture wastewater. The hydrogels were pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d8d0dd63bf12b6e44b446414da17786
https://doi.org/10.1016/s0144-8609(00)00058-3
https://doi.org/10.1016/s0144-8609(00)00058-3
Publikováno v:
Aquacultural Engineering. 19:163-178
Methods that will remove conventional nutrient pollutants such as reactive phosphorus, even at extremely low concentrations, from wastewater effluents are a major need in the aquaculture industry. In this study, novel phosphate binding crosslinked po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da010c65e0e0b435b801c0872f29cd01
https://doi.org/10.1016/s0144-8609(98)00049-1
https://doi.org/10.1016/s0144-8609(98)00049-1
Autor:
T. Kane, Stephan A. Cohen, M. Shinosky, Dimitri R. Kioussis, Yun-Yu Wang, Chih-Chao Yang, Elbert E. Huang, John M. Aitken, Jeffrey P. Gambino, Fen Chen, Daniel C. Edelstein
Publikováno v:
2012 IEEE International Reliability Physics Symposium (IRPS).
During technology development, the study of low-k TDDB is important for assuring robust chip reliability. It has been proposed that the fundamentals of low-k TDDB are closely correlated with the leakage conduction mechanism of low-k dielectrics. In a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95f1b9ce88dc8c2b54225a9884edf524
https://doi.org/10.1109/irps.2012.6241802
https://doi.org/10.1109/irps.2012.6241802