Zobrazeno 1 - 10
of 319
pro vyhledávání: '"Dimitri A. Antoniadis"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 5, Pp 205-214 (2016)
After 50 years of Moore's Law, Si CMOS, the mainstream logic technology, is on a course of diminishing returns. The use of new semiconductor channel materials with improved transport properties over Si offer the potential for device scaling to nanome
Externí odkaz:
https://doaj.org/article/2a924c451b9b4b3095ab36225804f955
Publikováno v:
IEEE Transactions on Electron Devices. 69:4016-4021
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d27b835c3161d05e56dce4069871d430
https://doi.org/10.1109/ted.2022.3175444
https://doi.org/10.1109/ted.2022.3175444
Autor:
Subhasish Mitra, Chenming Hu, H.-S. Philip Wong, Kerem Akarvardar, Tsu-Jae King-Liu, Sayeef Salahuddin, Jeffrey Bokor, James D. Plummer, Dimitri A. Antoniadis
Publikováno v:
Proceedings of the IEEE. 108:478-482
Since its inception, the semiconductor industry has used a physical dimension (the minimum gate length of a transistor) as a means to gauge continuous technology advancement. This metric is all but obsolete today. As a replacement, we propose a densi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67af365f826b76858e2cb2068fa40202
https://doi.org/10.1109/jproc.2020.2981715
https://doi.org/10.1109/jproc.2020.2981715
Publikováno v:
IEEE Transactions on Electron Devices. 66:4698-4705
In this article, a detailed simulation study of high-performance InGaAs quantum-well (QW) MOSFETs is presented. We demonstrate that the limited free carrier density in the access region leads to a significant source starvation effect in the saturatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af46d30a0d3ed84e524f17ada6784fa0
https://doi.org/10.1109/ted.2019.2942724
https://doi.org/10.1109/ted.2019.2942724
Publikováno v:
IEEE Transactions on Electron Devices. 66:95-105
This paper illustrates the usefulness of the physics-based compact device models in investigating the impact of device behavioral nuances on the operation and performance of the circuits and systems. The industry standard MIT virtual source gallium n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d52c2adac45eb2b5e5b3dc2e48faeb41
https://doi.org/10.1109/ted.2018.2848721
https://doi.org/10.1109/ted.2018.2848721
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We have carried out a detailed experimental study of the switching dynamics of HfZrO 2 Metal-Ferroelectric-Metal (MFM) and Metal-Ferroelectric-Insulator-Metal (MFIM) structures. In order to extract the intrinsic dynamic response, our experimental met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd668678f3d65fde28768d09d604a9a8
https://doi.org/10.1109/iedm13553.2020.9372013
https://doi.org/10.1109/iedm13553.2020.9372013
Autor:
Kenneth Eng Kian Lee, Bugra Kanargi, Chirn Chye Boon, Pilsoon Choi, Chuan Seng Tan, Dimitri A. Antoniadis, Eugene A. Fitzgerald, Evelyn N. Wang
Publikováno v:
BCICTS
This paper presents a logic inverter circuit consisting of both CMOS and GaN devices to drive high-torque DC motors requiring high voltages in various robotics applications. The GaN+CMOS inverter can be monolithically integrated with CMOS digital cir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a4b0e5b7952ca5256b3e22baf619f63
https://doi.org/10.1109/bcicts48439.2020.9392934
https://doi.org/10.1109/bcicts48439.2020.9392934
Publikováno v:
IEEE Electron Device Letters. 39:1250-1253
We experimentally demonstrate a 3D field-effect transistor (FET) architecture leveraging emerging nanomaterials: Dual Independent Stacked Channel FET (DISC-FET). DISC-FET is comprised of two FET channels vertically integrated on separate circuit laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6ba3164ea4f492744767da2babad648
https://doi.org/10.1109/led.2018.2851191
https://doi.org/10.1109/led.2018.2851191
Autor:
Ahmad Zubair, Tathagata Srimani, Yosi Stein, Ujwal Radhakrishna, Gage Hills, Rebecca Park, Dimitri A. Antoniadis, Max M. Shulaker, Mindy D. Bishop, Tomas Palacios
Publikováno v:
IEEE Electron Device Letters. 39:304-307
As continued scaling of silicon FETs grows increasingly challenging, alternative paths for improving digital system energy efficiency are being pursued. These paths include replacing the transistor channel with emerging nanomaterials (such as carbon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33272be5171d9fb59bdfe0e28352c7ff
https://doi.org/10.1109/led.2017.2781901
https://doi.org/10.1109/led.2017.2781901
Autor:
C. Schulte-Braucks, Roger Loo, Suman Datta, Dimitri A. Antoniadis, Ben Grisafe, Pankaj Sharma, Gilbert Bruce Rayner, Anurag Vohra, Cheng-Hsien Wu, Ram Krishna Ghosh, Siegfried Mantl, Chih-Chieh Yeh, Rahul Pandey, Mike Barth, Redwan N. Sajjad, Nils von den Driesch, Wilman Tsai, Dan Buca
Publikováno v:
IEEE Transactions on Electron Devices. 64:4354-4362
We present a detailed study on fabrication and characterization of Ge/GeSn heterojunction p-type tunnel-field-effect-transistors (TFETs). Critical process modules as high-k stack and p-i-n diodes are addressed individually. As a result an ultrathin e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1845137eaabae4ab082d8260f4b66a34
https://doi.org/10.1109/ted.2017.2742957
https://doi.org/10.1109/ted.2017.2742957