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pro vyhledávání: '"Dilorom S. Pulatova"'
Publikováno v:
East European Journal of Physics, Iss 2, Pp 353-357 (2024)
In this work, samples of single-crystalline silicon doped with tin were studied using X-ray diffraction and electron microscopy. It has been established that at a scattering angle of 2θ » 36.6° in the X-ray diffraction patterns of n-Si and Si samp
Externí odkaz:
https://doaj.org/article/7e74c7d0ecf046d69db317785eaf11ed
