Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Dilmurod A. Rakhmanov"'
Publikováno v:
East European Journal of Physics, Iss 3, Pp 375-378 (2024)
In this work, new sensitive thermal sensors based on Si and Si were developed. Single-crystal n- and p-type silicon samples doped with phosphorus and boron during growth were used for the study. These samples were first doped with platinum and pallad
Externí odkaz:
https://doaj.org/article/0e316aae4ee84e4ea24b8c6310ce7918
Publikováno v:
East European Journal of Physics, Iss 2, Pp 380-383 (2024)
In this work, the influence of alpha particles, protons and gamma rays on the crystal structure and structural characteristics of n-type silicon (n-Si) single crystals was studied using X-ray diffraction. N-type silicon (KEF-40) was used for the stud
Externí odkaz:
https://doaj.org/article/62319d30c0fb4a50bcd5434d1f233cf9
Publikováno v:
East European Journal of Physics. 2024, Issue 3, p375-378. 4p.
Publikováno v:
East European Journal of Physics. 2024, Issue 2, p380-383. 4p.
Autor:
UTAMURADOVA, SHARIFA B.1 utamuradova.rispm@ro.ru, RAKHMANOV, DILMUROD A.1 rakhmanov.rispm@bk.ru
Publikováno v:
Annals of the University of Craiova, Physics. 2022, Vol. 32, p132-136. 5p.