Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Dilip P. Vijay"'
Publikováno v:
Thin Solid Films. 350:21-29
RuOx thin films have been deposited by reactive sputtering in an O2/Ar atmosphere. The films were characterized for their stress and resistivity as a function of deposition temperature (room temperature, 300°C) and the O2 content (25–100%) in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2745ff0971e9361f76bee5b00830ab31
https://doi.org/10.1016/s0040-6090(99)00265-5
https://doi.org/10.1016/s0040-6090(99)00265-5
Publikováno v:
Integrated Ferroelectrics. 13:239-245
Composites of BSTO combined with other non electrically active oxides have demonstrated adjustable electronic properteis which can be tailored for use in various electronic devices.[1,2] These novel composites of barium strontium titanate (BSTO) and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cace6f6c5b5eed1412c0fa7263ce3d0
https://doi.org/10.1080/10584589608012319
https://doi.org/10.1080/10584589608012319
Publikováno v:
Physica Status Solidi (a). 157:75-82
Layered structure SrBi 2 Ta 2 O 9 thin films were grown on Pt/Ti/Si/SiO 2 substrates by laser ablation. The films were deposited at temperatures ranging from 500 to 750 °C and characterized for their phase formation, morphology, surface composition,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3b248181e92adde04ae5058bfbf0a50
https://doi.org/10.1002/pssa.2211570110
https://doi.org/10.1002/pssa.2211570110
Autor:
Seshu B. Desu, Dilip P. Vijay
Publikováno v:
Materials Science and Engineering: B. 32:83-88
c-Axis oriented SrBi2(TaxNb2−x)O9 (SBTN) ferroelectric thin films (0 < x < 2) have been deposited, for the first time, using pulsed laser ablation. Films were stoichiometries close to the target composition were deposited successfully on MgO(100)/P
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::729ea63674c3e6a1c6f99648ff4710a7
https://doi.org/10.1016/0921-5107(94)01169-9
https://doi.org/10.1016/0921-5107(94)01169-9
Autor:
Dilip P. Vijay, Seshu B. Desu
Publikováno v:
Materials Science and Engineering: B. 32:75-81
For the first time, fatigue-free ferroelectric thin-film capacitors have been fabricated, using pulsed laser deposition, with the layer-structure family of oxides as the ferroelectric material. Stoichiometric thin films of layer-structured SiBr2(TaxN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c75c0420fcdbce18103a85ce3623bb7
https://doi.org/10.1016/0921-5107(95)80017-4
https://doi.org/10.1016/0921-5107(95)80017-4
Publikováno v:
Journal of Applied Physics. 75:1521-1525
High-resolution and bright- and dark-field transmission electron microscopy are used to characterize and compare the interface structures and microstructure of PZT/RuO2/SiO2/Si and PZT/Pt/Ti/SiO2/Si ferroelectric thin films, with a view to understand
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cba027e36e5f88043870c321c7174405
https://doi.org/10.1063/1.356388
https://doi.org/10.1063/1.356388
Publikováno v:
Ferroelectrics Letters Section. 16:143-156
A modified precursor preparation method is suggested for sol-gel processing of better quality PZT thin films. The PZT precursor, prepared using Pb acetate, Ti isopropoxide and Zr n-propoxide, was modified by changing the order of precursor mixing. It
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f591a365fe380626c6ba7619962cc6d6
https://doi.org/10.1080/07315179308203359
https://doi.org/10.1080/07315179308203359
Autor:
Seshu B. Desu, Dilip P. Vijay
Publikováno v:
Journal of The Electrochemical Society. 140:2640-2645
Interface-related degradation problems in PbZr[sub x]Ti[sub 1[minus]x]O[sub 3] (PZT) thin- film nonvolatile memories have led to the search for alternate electrode materials to replace the conventional metal electrodes. In this work, the suitability
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15cb9970c71f7af1f0b304ae18ea3e63
https://doi.org/10.1149/1.2220877
https://doi.org/10.1149/1.2220877
Publikováno v:
Journal of The Electrochemical Society. 140:2635-2639
One of the key processing concerns in the integration of PbZr[sub x]Ti[sub 1[minus]x]O[sub 3](PZT) thin film capacitors into the existing VLSI for ferroelectric or dynamic random access memory applications is the patterning of these films and the ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ebe30752324baf20a5fbeb367c10e97
https://doi.org/10.1149/1.2220876
https://doi.org/10.1149/1.2220876
Publikováno v:
Integrated Ferroelectrics. 3:121-130
Suitability of oxide electronic conductors [e.g. ruthenium oxide (RuOx) and indium-tin-oxide (ITO)] as contact metallization for ferroelectric films (e.g. PbZrxTi1−xO3) was investigated using techniques such as Rutherford backscattering spectrometr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::629d876c3a4b6cde9694c316b14530ed
https://doi.org/10.1080/10584589308216706
https://doi.org/10.1080/10584589308216706