Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Dilip Chauhan"'
Publikováno v:
IEEE Sensors Letters. 3:1-4
Reduced dark current leading to a specific detectivity (D*) advantage over conventional detectors for extended threshold wavelength (ET) detectors are reported in this article. For an infrared (IR) detector with a graded injector barrier and barrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94a7d978869b608413307905b6efb8b0
https://doi.org/10.1109/lsens.2019.2915016
https://doi.org/10.1109/lsens.2019.2915016
Publikováno v:
IEEE Sensors Letters. 2:1-4
The extended wavelength infrared (IR) photodetectors are the new class of III-V semiconductor heterojunction-based photodetectors that can detect incoming radiation with energy significantly smaller than the minimum energy gap ( ) at the heterojuncti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8e1dd592046be3564bcdc057259426f
https://doi.org/10.1109/lsens.2018.2881047
https://doi.org/10.1109/lsens.2018.2881047
Publikováno v:
IEEE Photonics Technology Letters. 30:1617-1620
The threshold wavelength $(\lambda _{t})$ of spectral photoresponse of any semiconductor photodetector is determined by the minimum energy gap $(\Delta = 1.24/ \lambda _{t})$ of the material, or the interfacial energy gap of the heterostructure. It w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::47927f3536c0843d12feabec823b0797
https://doi.org/10.1109/lpt.2018.2860631
https://doi.org/10.1109/lpt.2018.2860631
Autor:
Yan-Feng Lao, Lianhe Li, Dilip Chauhan, Divya Somvanshi, A. G. Unil Perera, Suraj P. Khanna, Edmund H. Linfield
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 24:1-7
We analyze the extended threshold wavelength photoresponse beyond the standard threshold limit ( ${\lambda _t} = 1.24/\Delta $ , where $\Delta $ is the activation energy) in nonsymmetrical p-GaAs/AlGaAs heterostructure photodetectors with a barrier e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33944b1969f8923bbb297b01200a574e
https://doi.org/10.1109/jstqe.2017.2773622
https://doi.org/10.1109/jstqe.2017.2773622
The III-V semiconductor heterostructure-based photodetectors have been studied extensively for infrared detection, from near-infrared (NIR) to far-infrared (FIR) region. Due to the mature material system, GaAs/AlxGa1-xAs heterostructures are attracti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::293ba4f08f350d4af35ba35b8219da33
Extension of the wavelength threshold of an infrared detector beyond λt=hc/Δ is demonstrated, without reducing the minimum energy gap (Δ) of the material. Specifically, a photodetector designed with Δ=0.40 eV, and a corresponding λt=3.1 μm, was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae601ef941f9e524932430b0a192e4d7
Autor:
A. G. Unil Perera, Seyoum Wolde, Li Chen, Edmund H. Linfield, Dilip Chauhan, Lianhe Li, Suraj P. Khanna, Divya Somvanshi
Publikováno v:
Infrared Physics & Technology. 102:103026
In this work, the activation energy obtained from the temperature dependent internal photoemission spectroscopy (TDIPS) and thermionic dark currents using GaAs/AlGaAs photodetectors are compared. Different barrier heights within the p-type GaAs/AlGaA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7b582c74d909217de7847e822062814
https://doi.org/10.1016/j.infrared.2019.103026
https://doi.org/10.1016/j.infrared.2019.103026
Publikováno v:
SPIE Proceedings.
A novel concept utilizing a hot-carrier effect based on carrier interactions is achieved to extend the wavelength of the photodetector’s spectral response. A detector with a designed wavelength threshold (λ t ) at 3.1 μm displays two different ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19a0e6fbd5f46f57502accdee72530c5
https://doi.org/10.1117/12.2225264
https://doi.org/10.1117/12.2225264
Publikováno v:
Journal of Applied Physics. 122:024501
The dark current and spectral photoresponse thresholds of a semiconductor photodetector are normally determined by the minimum energy gap (Δ) of the material, or the interfacial energy gap of the heterostructure. In this manuscript, we discuss the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::171d2606098fe2ca24b58d8c8102f1bd
https://doi.org/10.1063/1.4992075
https://doi.org/10.1063/1.4992075
Publikováno v:
Applied Physics Letters. 108:201105
We report the performance of a 30 period p-GaAs/AlxGa1−xAs heterojunction photovoltaic infrared detector, with graded barriers, operating in the 2–6 μm wavelength range. Implementation of a current blocking barrier increases the specific detecti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39b33cb3ba86d9bf3b59dbd9b8ec27db
https://doi.org/10.1063/1.4952431
https://doi.org/10.1063/1.4952431