Zobrazeno 1 - 10
of 262
pro vyhledávání: '"Digermane"'
Akademický článek
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Autor:
Manolis Stratakis, Anastasia Louka
Publikováno v:
Organic Letters. 23:3599-3603
In the presence of Au/TiO2 (1 mol %), terminal alkynes react quantitatively with stoichiometric amounts of the unactivated digermane Me3Ge-GeMe3, forming exclusively cis-1,2-digermylated alkenes. W...
Publikováno v:
Russian Journal of Applied Chemistry. 93:1681-1687
Photochemical, chemical, and plasma chemical procedures for preparing digermane were studied experimentally. The plasma chemical procedure in corona discharge is the most promising. The kinetic curves of the digermane synthesis in corona discharge we
Autor:
S. A. Bochkor, V. V. Kuznetsov
Publikováno v:
Russian Journal of General Chemistry. 90:93-98
Relative stability of the staggered and eclipsed forms of digermane in model single-walled carbon nanotubes has been simulated by means of the PBE/3ζ DFT approximation. It has been shown that the influence of the nanosystem force field on the encaps
Publikováno v:
Synthesis-stuttgart. 50(10):2067-2075
Palladium-catalyzed germylation of aryl bromides and aryl triflates using commercially available hexamethyldigermane is described. Optimized reaction conditions afforded various functionalized aryltrimethylgermanes, including drug-like molecules, in
Chromium carbonyl complexes with aryl mono- and oligogermanes: Ability for haptotropic rearrangement
Autor:
Yuri F. Oprunenko, Igor P. Gloriozov, Andrei V. Churakov, Elmira Kh. Lermontova, Kirill V. Zaitsev
Publikováno v:
Journal of Organometallic Chemistry. 897:217-227
The intra- and inter molecular inter-ring η 6 ⇌ η 6 -haptotropic rearrangements (IRHR), occurring by involving interactions to Ge atoms in arylgermanes, were investigated theoretically and experimentally. The new methods for the synthesis of non-
Akademický článek
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Autor:
Pierre Tomasini
Publikováno v:
Pierre Tomasini
Autor:
J.M. Hartmann
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2020, 546, pp.125789-. ⟨10.1016/j.jcrysgro.2020.125789⟩
Journal of Crystal Growth, 2020, 546, pp.125789-. ⟨10.1016/j.jcrysgro.2020.125789⟩
Journal of Crystal Growth, Elsevier, 2020, 546, pp.125789-. ⟨10.1016/j.jcrysgro.2020.125789⟩
Journal of Crystal Growth, 2020, 546, pp.125789-. ⟨10.1016/j.jcrysgro.2020.125789⟩
GeSn/GeSi multi quantum wells with (i) high Sn content, direct bandgap GeSn wells and (ii) GeSi barriers with Si contents in the few %–30% range might be of use in optoelectronics. As GeSn has to be grown in the 300–375 °C range (to avoid Sn seg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::feee15035ad687914d3445f6d8fe91da
https://hal.archives-ouvertes.fr/hal-03490209
https://hal.archives-ouvertes.fr/hal-03490209
Publikováno v:
Zeitschrift für anorganische und allgemeine Chemie. 644:945-955