Zobrazeno 1 - 10
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pro vyhledávání: '"Differential quantum efficiency"'
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Autor:
Igor, Vurgaftman, author
Publikováno v:
Bands and Photons in III-V Semiconductor Quantum Structures, 2020, ill.
Externí odkaz:
https://doi.org/10.1093/oso/9780198767275.003.0012
Autor:
Masaru Kuramoto, Seiichiro Kobayashi, Takanobu Akagi, Komei Tazawa, Kazufumi Tanaka, Tatsuma Saito, Tetsuya Takeuchi
Publikováno v:
Applied Sciences, Vol 9, Iss 3, p 416 (2019)
High-efficiency and high-power operation have been demonstrated for blue GaN-based vertical-cavity surface-emitting lasers (VCSELs) with AlInN/GaN distributed Bragg reflectors. The high-efficiency performance was achieved by introducing a novel SiO2-
Externí odkaz:
https://doaj.org/article/af260a32973448e1ab99c7b72c21343d
Publikováno v:
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).
Worldwide research efforts have been focusing on quantum efficiency enhancements of GaN-based light emitters. A promising approach is the separation of multiple active regions by tunnel junctions, enabling electron-hole pairs to generate more than on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1058d04bf54f7fcf5d9414f2eafa7bde
https://doi.org/10.1109/nusod52207.2021.9541524
https://doi.org/10.1109/nusod52207.2021.9541524
Autor:
Blood, Peter, author
Publikováno v:
Quantum Confined Laser Devices : Optical gain and recombination in semiconductors, 2015, ill.
Externí odkaz:
https://doi.org/10.1093/acprof:oso/9780199644513.003.0015
Autor:
Tetsuya Takeuchi, Takanobu Akagi, Seiichiro Kobayashi, Kazufumi Tanaka, Masaru Kuramoto, Komei Tazawa, Tatsuma Saito
Publikováno v:
Applied Sciences
Volume 9
Issue 3
Applied Sciences, Vol 9, Iss 3, p 416 (2019)
Volume 9
Issue 3
Applied Sciences, Vol 9, Iss 3, p 416 (2019)
High-efficiency and high-power operation have been demonstrated for blue GaN-based vertical-cavity surface-emitting lasers (VCSELs) with AlInN/GaN distributed Bragg reflectors. The high-efficiency performance was achieved by introducing a novel SiO2-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::908191520f5b37c1d5cf512d203294b9
Publikováno v:
Optik. 125:4911-4915
The effect of the laser ridge width on the performance characteristics of deep violet In 0.082 Ga 0.918 N/GaN double quantum well (DQW) laser diodes (LDs) has been numerically investigated. Simulation results indicated that threshold current of LDs i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed987d6770028a6aa5370348c9f1c2c1
https://doi.org/10.1016/j.ijleo.2014.04.030
https://doi.org/10.1016/j.ijleo.2014.04.030
Autor:
Takanobu Akagi, Komei Tazawa, Kazufumi Tanaka, Seiichiro Kobayashi, Tatsuma Saito, Masaru Kuramoto
Publikováno v:
Applied Physics Letters. 115:041101
A phase-locked ring-array GaN-based vertical-cavity surface-emitting laser (VCSEL) was demonstrated using a floral-patterned structure, based on a buried-SiO2 lateral optical confinement technique. This structure enabled the realization of evanescent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::031fd5d1d19f5651658fe467b9823939
https://doi.org/10.1063/1.5104289
https://doi.org/10.1063/1.5104289
Autor:
Kwang-Chun Ho
Publikováno v:
The Journal of the Institute of Webcasting, Internet and Telecommunication. 12:51-56
The resonance properties of circular vertical-cavity surface-emitting lasers (VCSELs) are studied by using a newly developed equivalent network approach. Optical parameters, such as the stop-band or the reflectivity of periodic Bragg mirrors and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ff4a5913036640624fb235e23f618a2
https://doi.org/10.7236/jiwit.2012.12.1.51
https://doi.org/10.7236/jiwit.2012.12.1.51
Publikováno v:
Electronics Letters. 50:1864-1866
Data are presented showing high external differential quantum efficiency (DQE) and record-high output power in vertical-cavity surface-emitting lasers (VCSELs) with diameters below 3 µm. Good uniformity and reproducibility are achieved in devices wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99ac2de61eb54a8221d6ba6e5f736231
https://doi.org/10.1049/el.2014.3352
https://doi.org/10.1049/el.2014.3352