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pro vyhledávání: '"Dietrich eHesse"'
Publikováno v:
Frontiers in Physics, Vol 2 (2014)
We report an analogously programmable memristor based on genuine electronic resistive switching combining ferroelectric switching and electron tunneling. The tunnel current through an 8 unit cell thick epitaxial Pb(Zr[0.2]Ti[0.8])O[3] film sandwiched
Externí odkaz:
https://doaj.org/article/33ddda54460445e580a71784305ad4d3
