Zobrazeno 1 - 10
of 1 118
pro vyhledávání: '"Dietl, T."'
Autor:
Sztenkiel, D., Gas, K., Szwacki, N. Gonzalez, Foltyn, M., Sliwa, C., Wojciechowski, T., Domagala, J. Z., Hommel, D., Sawicki, M., Dietl, T.
We report magnetization changes generated by an electric field in ferromagnetic Ga$_{1-x}$Mn$_x$N grown by molecular beam epitaxy. Two classes of phenomena have been revealed. First, over a wide range of magnetic fields, the magnetoelectric signal is
Externí odkaz:
http://arxiv.org/abs/2406.13534
Autor:
Yahniuk, I., Kazakov, A., Jouault, B., Krishtopenko, S. S., Kret, S., Grabecki, G., Cywiński, G., Mikhailov, N. N., Dvoretskii, S. A., Przybytek, J., Gavrilenko, V. I., Teppe, F., Dietl, T., Knap, W.
HgTe quantum wells with a thickness of ${\sim}$7 nm may have a graphene-like band structure and have been recently proposed to be potential candidates for quantum Hall effect (QHE) resistance standards under the condition of operation in the fields a
Externí odkaz:
http://arxiv.org/abs/2111.07581
Autor:
Satake, Y., Shiogai, J., Mazur, G. P., Kimura, S., Awaji, S., Fujiwara, K., Nojima, T., Nomura, K., Souma, S., Sato, T., Dietl, T., Tsukazaki, A.
Publikováno v:
Phys. Rev. Materials 4, 044202 (2020)
Three-dimensional topological insulators (3D-TIs) possess a specific topological order of electronic bands, resulting in gapless surface states via bulk-edge correspondence. Exotic phenomena have been realized in ferromagnetic TIs, such as the quantu
Externí odkaz:
http://arxiv.org/abs/2002.09292
Autor:
Grzybowski, M. J., Wadley, P., Edmonds, K. W., Campion, R. P., Dybko, K., Majewicz, M., Gallagher, B. L., Sawicki, M., Dietl, T.
Antiferromagnets (AFs) attract much attention due to potential applications in spintronics. Both the electric current and the electric field are considered as tools suitable to control properties and the N\'eel vector direction of AFs. Among AFs, CuM
Externí odkaz:
http://arxiv.org/abs/1908.03521
Autor:
Sawicki, M., Proselkov, O., Sliwa, C., Aleshkevych, P., Domagala, J. Z., Sadowski, J., Dietl, T.
Publikováno v:
Phys. Rev. B 97, 184403 (2018)
Historically, comprehensive studies of dilute ferromagnetic semiconductors, e.g., $p$-type (Cd,Mn)Te and (Ga,Mn)As, paved the way for a quantitative theoretical description of effects associated with spin-orbit interactions in solids, such as crystal
Externí odkaz:
http://arxiv.org/abs/1802.00076
Autor:
Mazur, G. P., Dybko, K., Szczerbakow, A., Domagala, J. Z., Kazakov, A., Zgirski, M., Lusakowska, E., Kret, S., Korczak, J., Story, T., Sawicki, M., Dietl, T.
Publikováno v:
Phys. Rev. B 100, 041408(R) (2019)
Point-contact spectroscopy of several non-superconducting topological materials reveals a low temperature phase transition that is characterized by a Bardeen-Cooper-Schrieffer-type of criticality. We find such a behavior of differential conductance f
Externí odkaz:
http://arxiv.org/abs/1709.04000
Autor:
Souma, S., Chen, L., Oszwałdowski, R., Sato, T., Matsukura, F., Dietl, T., Ohno, H., Takahashi, T.
Recently, Kobayashi et al. (arXiv:1608.07718; ref. 1) have proposed an alternative interpretation of our angle-resolved photoemission spectroscopy (ARPES) results for the dilute ferromagnetic semiconductor (Ga,Mn)As. They claim that our ARPES data [S
Externí odkaz:
http://arxiv.org/abs/1609.01047
Autor:
Souma, S., Chen, L., Oszwaldowski, R., Sato, T., Matsukura, F., Dietl, T., Ohno, H., Takahashi, T.
Publikováno v:
Scientific Reports 6, 27266 (2016)
Carrier-induced nature of ferromagnetism in a ferromagnetic semiconductor, (Ga,Mn)As, offers a great opportunity to observe novel spin-related phenomena as well as to demonstrate new functionalities of spintronic devices. Here, we report on low-tempe
Externí odkaz:
http://arxiv.org/abs/1606.02047
Autor:
Sztenkiel, D., Foltyn, M., Mazur, G. P., Adhikari, R., Kosiel, K., Gas, K., Zgirski, M., Kruszka, R., Jakiela, R., Li, Tian, Piotrowska, A., Bonanni, A., Sawicki, M., Dietl, T.
Publikováno v:
Nat. Commun. 7, 13232 (2016)
By direct magnetization measurements, performed employing a new detection scheme, we demonstrate an electrical control of magnetization in wurtzite (Ga,Mn)N. In this dilute magnetic insulator the Fermi energy is pinned by Mn ions in the mid-gap regio
Externí odkaz:
http://arxiv.org/abs/1604.06937
Publikováno v:
Phys. Rev. B 91, 184409 (2015)
Electronic and magnetic properties of Ga$_{1-x}$Mn$_{x}$As, obtained from first-principles calculations employing the hybrid HSE06 functional, are presented for $x=6.25\%$ and $12.5\%$ under pressures ranging from 0 to 15 GPa. In agreement with photo
Externí odkaz:
http://arxiv.org/abs/1502.03861