Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Dieter Schroder"'
Publikováno v:
The SHAFR Guide Online
Externí odkaz:
https://doi.org/10.1163/2468-1733_shafr_SIM180090002
Publikováno v:
ECS Transactions. 3:1211-1222
Device performance and reliability are of concern for devices fabricated on strained Si wafers. For strained Si formed by SiGe crystal growth, defects are of particular interest. We characterized such SiGe samples by pulsed MOS capacitor, gate oxide
Publikováno v:
MRS Proceedings. 863
Electromigration tests were performed on passivated electroplated Au four terminal Kelvin line structures using the conventional in situ resistance monitoring technique. The stress conditions were a current density of 2.0 MA/cm2 with ambient temperat
Autor:
Steve Kilgore, Dieter Schroder
Publikováno v:
ECS Meeting Abstracts. :10-10
not Available.
Autor:
Dieter Schroder
Publikováno v:
ECS Meeting Abstracts. :1232-1232
Contactless measurements are attractive because they do not contaminate the sample and generally do not require extensive sample preparation. It is for these reasons that they are more commonly used. We will discuss mainly methods for material but so
Characterization of Strained Si/SiGe With Pulsed MOS Capacitor and Gate Oxide Integrity Measurements
Autor:
Jiun-Hsin Liao, Dieter Schroder
Publikováno v:
ECS Meeting Abstracts. :1523-1523
not Available.
Autor:
Joon-Young Choi, Dieter Schroder
Publikováno v:
ECS Meeting Abstracts. :567-567
not Available.
Autor:
Dieter Schroder
Publikováno v:
Kyklos. 32:129-141