Zobrazeno 1 - 10
of 271
pro vyhledávání: '"Dieter Schmeisser"'
Autor:
Robert Mroczyński, Grzegorz Głuszko, Romuald B. Beck, Andrzej Jakubowski, Michał Ćwil, Piotr Konarski, Patrick Hoffmann, Dieter Schmeißer
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3 (2023)
This work reports on changes in the properties of ultra-thin PECVD silicon oxynitride layers after high- temperature treatment. Possible changes in the structure, composition and electrophysical properties were investigated by means of spectroscopic
Externí odkaz:
https://doaj.org/article/003c8061cc35468d90e4d4ebe16d36db
Autor:
Robert Mroczyński, Tomasz Bieniek, Romuald B. Beck, Michał Ćwil, Piotr Konarski, Patrick Hoffmann, Dieter Schmeißer
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 3 (2023)
In this paper differences in chemical composition of ultra-thin silicon oxynitride layers fabricated in planar rf plasma reactor are studied. The ultra-thin dielectric layers were obtained in the same reactor by two different methods: ultrashallow ni
Externí odkaz:
https://doaj.org/article/04cd6989cd194b1286d03ae5337d02fd
Atomic Layer-Deposited Aluminum Oxide Hinders Iodide Migration and Stabilizes Perovskite Solar Cells
Autor:
Chittaranjan Das, Malgorzata Kot, Tim Hellmann, Carolin Wittich, Eric Mankel, Iwan Zimmermann, Dieter Schmeisser, Mohammad Khaja Nazeeruddin, Wolfram Jaegermann
Publikováno v:
Cell Reports Physical Science, Vol 1, Iss 7, Pp 100112- (2020)
Summary: Iodide migration causes degradation of the perovskite solar cells. Here, we observe the direct migration of iodide into the hole-transport layer in a device. We demonstrate that ultrathin room temperature atomic layer-deposited Al2O3 on the
Externí odkaz:
https://doaj.org/article/3253a11e0683462aa1c515994c0db26f
Autor:
Chittaranjan Das, Malgorzata Kot, Zied Rouissi, Kamil Kędzierski, Karsten Henkel, Dieter Schmeißer
Publikováno v:
ACS Omega, Vol 2, Iss 4, Pp 1360-1366 (2017)
Externí odkaz:
https://doaj.org/article/5bbce1ea0c8846b4b19b60dfda37a67b
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 5, Iss 1, Pp 77-82 (2014)
We study the atomic layer deposition of TiO2 by means of X-ray absorption spectroscopy. The Ti precursor, titanium isopropoxide, was used in combination with H2O on Si/SiO2 substrates that were heated at 200 °C. The low growth rate (0.15 Å/cycle) a
Externí odkaz:
https://doaj.org/article/9683b1278a5c41a0ad903674a0fa86cf
Autor:
Jörg Haeberle, Karsten Henkel, Hassan Gargouri, Franziska Naumann, Bernd Gruska, Michael Arens, Massimo Tallarida, Dieter Schmeißer
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 4, Iss 1, Pp 732-742 (2013)
We report on results on the preparation of thin (
Externí odkaz:
https://doaj.org/article/085f5ffa5f374f9282fd7c970ba4a0d6
Autor:
Sujoy Kumar Ghosh, Jin Kuk Kim, Tridib Kumar Sinha, Dieter Schmeißer, Dipankar Mandal, Krittish Roy, Samiran Garain, Karsten Henkel, Christopher R. Bowen, Mengying Xie, Biswajit Mahanty
Publikováno v:
ACS Applied Electronic Materials. 3:248-259
The design and development of intrinsically stretchable all-organic self-powered sensors concurrently perceiving temperature and pressure remain a challenge but deliver an exciting platform to real...
Autor:
Peter Kúš, C. Escudero, Dieter Schmeißer, Antonio Abate, Małgorzata Kot, Lukas Kegelmann, Steve Albrecht, Jan Ingo Flege, Hans Köbler, Iva Matolínová, Mykhailo Vorokhta, Masssimo Tallarida, Břetislav Šmíd
Publikováno v:
Chemsuschem
For several years, scientists have been trying to understand the mechanisms that reduce the long‐term stability of perovskite solar cells. In this work, we examined the effect of water and photon flux on the stability of CH3NH3PbI3 perovskite films
Publikováno v:
ACS Applied Polymer Materials. 2:862-878
Flexible and wearable e-skin sensors are attracting a great interest for their smart sensing applications in next-generation electronics. However, implant ability, sensitivity, and biosignal detect...
Autor:
Dennis Lin, Stefan De Gendt, Claudia Fleischmann, Laura Nyns, Daniel Cuypers, Tsvetan Ivanov, Olivier Richard, Massimo Tallarida, Dieter Schmeißer, Dennis H. van Dorp, Simone Brizzi, Matthias Müller, Philipp Hönicke, Christoph Adelmann
Publikováno v:
ACS Applied Electronic Materials. 1:2190-2201
The passivation of n-type InP (100) using sulfur in combination with a gadolinium aluminate (GAO) dielectric layer has been studied. Photoluminescence, minority-carrier lifetime, and capacitance–voltage measurements indicate that a (NH4)2S vapor pa