Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Dieter Pierreux"'
Publikováno v:
Journal of the Electrochemical Society, 159(3), H277-H285. Electrochemical Society, Inc.
Plasma-assisted atomic layer deposition (ALD) was used to deposit SiO2 films in the temperature range of Tdep = 50–400°C on Si(100). H2Si[N(C2H5)2]2 and an O2 plasma were used as Si precursor and oxidant, respectively. The ALD growth process and m
Autor:
Jorge A. Kittl, Geoffrey Pourtois, Xiaoping Shi, Laura Nyns, Laurent Breuil, Sven Van Elshocht, Hilde Tielens, Nicolas Menou, Christoph Adelmann, Malgorzata Jurczak, Marlies K. Van Bael, Johan Swerts, Mihaela Popovici, Annelies Delabie, J. W. Maes, An Hardy, Dieter Pierreux
Publikováno v:
ECS Transactions. 27:693-698
Multi-element and multilayer high-k dielectric stacks are being explored for future generation logic and memory devices. The increased material complexity can have a significant impact on the thermal stability and crystallization behavior of the stac
Autor:
Jan Willem Maes, Alexis Franquet, Dieter Pierreux, Alain Moussa, Christoph Adelmann, Bert Brijs, Thierry Conard, Marlies K. Van Bael, Johan Swerts, Jorge A. Kittl, Sven Van Elshocht, Hilde Tielens, An Hardy, Malgorzata Jurczak, Daan Dewulf
Publikováno v:
Chemical Vapor Deposition. 16:170-178
For future generations of non-volatile memory applications, the replacement of the interpoly dielectric by a suitable high-k material is required. Rare-earth aluminates are potential candidates because they are predicted to combine a high dielectric
Autor:
Mihaela Popovici, Jorge Kittl, Hilde Tielens, Dieter Pierreux, Marlies K. Van Bael, Annelies Delabie, Christoph Adelmann, Tom Schram, J. W. Maes, Sven Van Elshocht, Johan Swerts, An Hardy, Xiaoping Shi, Laura Nyns, G. Pourtois, Bert Brijs
Publikováno v:
ECS Transactions. 28:155-164
Rare earth based oxides are researched for logic and memory semiconductor applications. Their hygroscopic nature and tendency to form silicates make them a challenging class of materials in respect of processing and stability. Using LaAlO3, LuAlO3, a
Autor:
Jan Willem Maes, Joshua Tseng, L.-A. Ragnarsson, Dieter Pierreux, Thierry Conard, Mihaela Popovici, S. Van Elshocht, Eva Tois, Johan Swerts, Tom Schram, Vladimir Machkaoutsan, Christoph Adelmann
Publikováno v:
Scopus-Elsevier
A sub 1-nm equivalent oxide thickness (EOT) gate stack with conduction band edge effective work function is demonstrated with an ALD deposited HfO2/SrTiO3 based composite material. An EOT reduction of 0.2 nm as compared to the HfO2 reference is obtai
Autor:
Jorge A. Kittl, Xiaoping Shi, Johan Swerts, Dieter Pierreux, Erik Rosseel, S. Van Elshocht, Hilde Tielens, Christoph Adelmann, Jurgen Kesters
Publikováno v:
Scopus-Elsevier
GdHfOx thin films were deposited by atomic-layer deposition (ALD) using Tris(isopropyl-cyclopentadienyl)Gadolinium [Gd(i-PrCp)3] and HfCl4 in combination with H2O as oxidizer. Growth curves show nearly ideal ALD behavior. The growth per cycle is foun
Autor:
Dirk Wouters, J. Van Houdt, Hugo Bender, Karl Opsomer, Bogdan Govoreanu, Wouter Polspoel, P. Fischer, Robin Degraeve, Jorge A. Kittl, Marc Schaekers, D. Manger, Annelies Delabie, Aude Rothschild, M. A. Pawlak, J. W. Maes, S. Van Elshocht, J. Swerts, Dieter Pierreux, Werner Knaepen, X.P. Wang, Christophe Detavernier, Bert Brijs, Johan Meersschaut, Mihaela Popovici, Sergiu Clima, Paola Favia, Alexis Franquet, Tom E. Blomberg, Mohammed Zahid, Geoffrey Pourtois, Thierry Conard, Wilfried Vandervorst, Nicolas Menou, Malgorzata Jurczak, K. Tomida, Ben Kaczer, Christoph Adelmann, Valery V. Afanas'ev
Publikováno v:
Microelectronic Engineering. 86:1789-1795
The requirements and development of high-k dielectric films for application in storage cells of future generation flash and Dynamic Random Access Memory (DRAM) devices are reviewed. Dielectrics with k-value in the 9-30 range are studied as insulators
Autor:
Jorge A. Kittl, Wouter Polspoel, M. Schaekers, Tom E. Blomberg, Johannes Meersschaut, Aude Rothschild, J.W. Maes, Paola Favia, Mihaela Popovici, Hugo Bender, Ben Kaczer, Karl Opsomer, Christoph Adelmann, Bogdan Govoreanu, Robin Degraeve, Werner Knaepen, N. Menou, Pamela René Fischer, Wilfried Vandervorst, Valery V. Afanas'ev, A. Franquet, Dieter Pierreux, T. Conrad, Dirk Wouters, S. Van Elshocht, Malgorzata Jurczak, J. Swerts, Mohammed Zahid, K. Tomida, Geoffrey Pourtois, Christophe Detavernier, X.P. Wang, Sergiu Clima, D. Manger, Annelies Delabie, Bert Brijs, J. Van Houdt, M. A. Pawlak
Publikováno v:
ECS Transactions. 19:29-40
The requirements and development of high-k dielectric films for application in storage cells of future generation flash and Dynamic Random Access Memory (DRAM) devices are reviewed. Dielectrics with k-value in the 9-30 range are studied as insulators
Autor:
Suvi Haukka, Eva Tois, Pamela R. Fischer, Peter Zagwijn, Jacky Sirugue, Olivier Rouault, Dieter Pierreux
Publikováno v:
ECS Transactions. 16:135-148
Thermal ALD deposition of ZrO2 and HfO2 films has been performed in the ASM A412(TM) 300mm vertical furnace using bis-cyclopentadienyl precursors. Due to the long precursor residence time and high surface area to be covered in a batch reactor, the th
Autor:
Ernst Hendrik August Granneman, Herbert Terhorst, Pamela R. Fischer, Peter Zagwijn, Dieter Pierreux
Publikováno v:
Surface and Coatings Technology. 201:8899-8907
A comparison is made between single-wafer and (vertical) batch systems for Atomic Layer Deposition (ALD). Various characteristic times that play a role in such systems are compared. Many of these characteristic times are substantially shorter in sing