Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Diego Kienle"'
Autor:
Ji Kai Wang, Collin VanEssen, Thomas Cam, Keith Ferrer, Zhi Cheng Yuan, Prasad S. Gudem, Diego Kienle, Mani Vaidyanathan
Publikováno v:
IEEE Transactions on Electron Devices. 69:4153-4161
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbe0ae1ccc0280d72b33b2a37133d6b2
https://doi.org/10.1109/ted.2022.3187374
https://doi.org/10.1109/ted.2022.3187374
Autor:
Mani Vaidyanathan, Collin G. VanEssen, Prasad S. Gudem, Anirudh Aggarwal, Zhi Cheng Yuan, Diego Kienle
Publikováno v:
IEEE Transactions on Electron Devices. 68:5101-5107
We propose a parallel negative-capacitance field-effect transistor (P-NCFET) structure, in which a ferroelectric operating in its negative-capacitance region is placed in parallel with the gate and source terminals of a MOSFET. The P-NCFET is stabili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7357c0cf12bbefa2bb70d98b8b5cbcaa
https://doi.org/10.1109/ted.2021.3108125
https://doi.org/10.1109/ted.2021.3108125
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 68:903-907
We derive analytical expressions for the harmonic transfer functions (HTFs) of N-path filters with arbitrary source and load impedances. We start with first-order approximations of the HTFs based on a simplified “Ohm’s-law” characterization of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b30881342ce4739f936d6df822e00dc6
https://doi.org/10.1109/tcsii.2020.3022860
https://doi.org/10.1109/tcsii.2020.3022860
Autor:
Kyle Holland, Prasad S. Gudem, Ji Kai Wang, Michael Wong, Mani Vaidyanathan, Thomas Cam, Diego Kienle
Publikováno v:
IEEE Transactions on Electron Devices. 67:3843-3851
We use full quantum-transport simulations by coupling the Landau–Khalatnikov (LK) and Poisson equations self-consistently with the nonequilibrium Green’s function (NEGF) formalism, and calibrated to experimental results, to investigate extremely
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58bf1dc68e2c8eed71fb073454f4a33a
https://doi.org/10.1109/ted.2020.3007398
https://doi.org/10.1109/ted.2020.3007398
Autor:
Ji Kai Wang, Prasad S. Gudem, Zhi Cheng Yuan, Michael Wong, Thomas Cam, Kyle Holland, Mani Vaidyanathan, Diego Kienle
Publikováno v:
IEEE Transactions on Electron Devices. 67:3442-3450
As continuous development and optimization of negative-capacitance field-effect transistors (NCFETs) are pursued for digital applications, it is also desirable to examine the radio frequency (RF) performance of these devices, especially devices with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b55447c443aa413cf3778aa342299e5
https://doi.org/10.1109/ted.2020.3001248
https://doi.org/10.1109/ted.2020.3001248
Autor:
Ji Kai Wang, Prasad S. Gudem, Michael Wong, Zhi Cheng Yuan, Terence B. Hook, Paul M. Solomon, Mani Vaidyanathan, Diego Kienle
Publikováno v:
IEEE Transactions on Electron Devices. 66:2028-2035
Ferroelectric and negative-capacitance field-effect transistors (FeFETs and NCFETs) have recently garnered great attention as devices for applications in memory and low-power logic, respectively. As these technologies are pursued, it is critical to h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a7b3548250cebcf7931a3edfa83cde9
https://doi.org/10.1109/ted.2019.2901668
https://doi.org/10.1109/ted.2019.2901668
Autor:
Diego Kienle, Thomas Cam, Ji Kai Wang, Terence B. Hook, Kyle D. Holland, Michael Wong, Mani Vaidyanathan, Prasad S. Gudem
Publikováno v:
IEEE Transactions on Electron Devices. 64:5107-5113
We investigate the channel material dependence of wave function deformation scattering (WDS), a phenomenon that occurs when the shape of the carrier wave function is forced to change as the channel is traversed. Line-edge roughness (LER) is one nonid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::137662a1d57c807aa681ddfa53aa4c49
https://doi.org/10.1109/ted.2017.2766782
https://doi.org/10.1109/ted.2017.2766782
Autor:
Zhi Cheng Jason Yuan, Terence B. Hook, Michael Wong, Mani Vaidyanathan, Prasad S. Gudem, Kyle D. Holland, Sam Anderson, Shahriar Rizwan, Diego Kienle
Publikováno v:
IEEE Transactions on Electron Devices. 64:1231-1238
We examine the impact of line-edge roughness (LER) on the variability in the on-current and saturation threshold voltage of ultrascaled FinFET devices via quantum-mechanical transport simulation. We obtain a realistic model of LER by decomposing the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bcda74ace55e769e195df32939a78b4
https://doi.org/10.1109/ted.2017.2655520
https://doi.org/10.1109/ted.2017.2655520
Autor:
Prasad S. Gudem, Serag Gadelrab, Shahriar Rizwan, Zhi Cheng Yuan, Kyle D. Holland, Sam Anderson, Terence B. Hook, Diego Kienle, Michael Wong, Mani Vaidyanathan
Publikováno v:
IEEE Transactions on Electron Devices. 63:4046-4052
Recently, negative-capacitance FETs (NCFETs) have been proposed to reduce subthreshold slope and help continue supply-voltage scaling alongside channel-length scaling. We investigate the high-frequency switching behavior of NCFETs using the Landau–
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70c3150a7a1ab6380821d25b36ed28cb
https://doi.org/10.1109/ted.2016.2602209
https://doi.org/10.1109/ted.2016.2602209
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 63:3874-3887
The radio-frequency (RF) linearity performance potential of short-channel graphene field-effect transistors (GFETs) is assessed by using a nonlinear small-signal circuit model under the first approximation of ballistic transport. An intrinsic GFET is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56519f6fb659fa9cb83fab0fd389a538
https://doi.org/10.1109/tmtt.2015.2496295
https://doi.org/10.1109/tmtt.2015.2496295