Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Diego G. Dupouy"'
Autor:
Saška Brajkovic, Benjamin Pelz, Maria-Giuseppina Procopio, Anne-Laure Leblond, Grégoire Repond, Ariane Schaub-Clerigué, Diego G Dupouy, Alex Soltermann
Publikováno v:
Diagnostic Pathology, Vol 13, Iss 1, Pp 1-10 (2018)
Abstract Background Anaplastic lymphoma kinase (ALK) is a key oncogenic driver in lung adenocarcinoma patients and its fusion proteins are routinely assessed. The microfluidic tissue processor (MTP) device is based on a chip-confined low-volume techn
Externí odkaz:
https://doaj.org/article/9c88294cdf56429c942bea4e709d7f2f
Autor:
Hampus Elofsson, Agata Zieba Wicher, Carolina Oses Sepulveda, Tony Ullman, Maria-Giuseppina Procopio, Alix Faillétaz, Diego G. Dupouy, Charlotte Stadler
Publikováno v:
Cancer Research. 83:4336-4336
The PD-1/PD-L1 signaling pathway is essential for immune control and maintaining immune system balance. PD-1 and PD-L1 proteins exert most functions in cells and tissues by undergoing modifications and forming dynamic complexes – effects that canno
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::018ea98c4e9be4215f562d1a37ed1a2e
https://doi.org/10.1158/1538-7445.am2023-4336
https://doi.org/10.1158/1538-7445.am2023-4336
Autor:
Alvaro Padilla, R. S. Shenoy, P. M. Rice, Robert M. Shelby, Teya Topuria, Andrew J. Kellock, Kailash Gopalakrishnan, Bryan L. Jackson, Charles T. Rettner, B. N. Kurdi, Geoffrey W. Burr, Anthony Debunne, Diego G. Dupouy, Kumar Virwani
Publikováno v:
2010 International Electron Devices Meeting.
We show that bias polarity can greatly accelerate device failure in GST- based (GeSbTe) PCM devices, and trace this effect to elemental segregation, initially driven by bias across the melt but then enhanced during the crystallization process. Implic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a16585c7af70c91730979cbd751b9e25
https://doi.org/10.1109/iedm.2010.5703444
https://doi.org/10.1109/iedm.2010.5703444
Autor:
Kailash Gopalakrishnan, Charles T. Rettner, Bryan L. Jackson, Geoffrey W. Burr, John P. Karidis, Michele M. Franceschini, Alvaro Padilla, Diego G. Dupouy, R. S. Shenoy
Publikováno v:
2010 IEEE Globecom Workshops.
We describe observations into the inner workings of phase change memory devices, obtained by fabrication, electrical characterization, failure analysis, and modeling of prototype phase change memory devices over the past few years. Experiments involv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f118c1230a211f29cc4e8defdce7990
https://doi.org/10.1109/glocomw.2010.5700271
https://doi.org/10.1109/glocomw.2010.5700271
Autor:
Kailash Gopalakrishnan, Robert M. Shelby, Bryan L. Jackson, B. N. Kurdi, Philip M. Rice, Anthony Debunne, Andrew J. Kellock, Geoffrey W. Burr, Charles T. Rettner, Diego G. Dupouy, Alvaro Padilla, Kumar Virwani, R. S. Shenoy, Teya Topuria
Publikováno v:
Journal of Applied Physics. 110:054501
We assess voltage polarity effects in phase-change memory (PCM) devices that contain Ge2Sb2Te5 (GST) as the active material through the study of vertically asymmetric pore-cell and laterally symmetric bridge-cell structures. We show that bias polarit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f096c4b50454ff95f6338746e7e05bd3
https://doi.org/10.1063/1.3626047
https://doi.org/10.1063/1.3626047